Cavity-enhanced room-temperature broadband Raman memory
Cavity-enhanced room-temperature broadband Raman memory
Broadband quantum memories hold great promise as multiplexing elements in future photonic quantum information protocols. Alkali-vapor Raman memories combine high-bandwidth storage, on-demand readout, and operation at room temperature without collisional fluorescence noise. However, previous implementations have required large control pulse energies and have suffered from four-wave-mixing noise. Here, we present a Raman memory where the storage interaction is enhanced by a low-finesse birefringent cavity tuned into simultaneous resonance with the signal and control fields, dramatically reducing the energy required to drive the memory. By engineering antiresonance for the anti-Stokes field, we also suppress the four-wave-mixing noise and report the lowest unconditional noise floor yet achieved in a Raman-type warm vapor memory, (15±2)×10−3 photons per pulse, with a total efficiency of (9.5±0.5)%.
1-5
Saunders, D. J.
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Munns, J. H. D.
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Champion, T. F. M.
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Qiu, C.
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Kaczmarek, K. T.
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Poem, E.
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Ledingham, P. M.
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Walmsley, I. A.
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Nunn, J.
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3 March 2016
Saunders, D. J.
8d590c4e-2ea0-439c-bf42-03192c9eb60e
Munns, J. H. D.
a377f213-2da3-463c-924b-32122eb68c4c
Champion, T. F. M.
c1585669-403b-4c9d-b54d-dcbc22f7bf22
Qiu, C.
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Kaczmarek, K. T.
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Poem, E.
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Ledingham, P. M.
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Walmsley, I. A.
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Nunn, J.
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Saunders, D. J., Munns, J. H. D., Champion, T. F. M., Qiu, C., Kaczmarek, K. T., Poem, E., Ledingham, P. M., Walmsley, I. A. and Nunn, J.
(2016)
Cavity-enhanced room-temperature broadband Raman memory.
Physical Review Letters, 116 (9), , [090501].
(doi:10.1103/PhysRevLett.116.090501).
Abstract
Broadband quantum memories hold great promise as multiplexing elements in future photonic quantum information protocols. Alkali-vapor Raman memories combine high-bandwidth storage, on-demand readout, and operation at room temperature without collisional fluorescence noise. However, previous implementations have required large control pulse energies and have suffered from four-wave-mixing noise. Here, we present a Raman memory where the storage interaction is enhanced by a low-finesse birefringent cavity tuned into simultaneous resonance with the signal and control fields, dramatically reducing the energy required to drive the memory. By engineering antiresonance for the anti-Stokes field, we also suppress the four-wave-mixing noise and report the lowest unconditional noise floor yet achieved in a Raman-type warm vapor memory, (15±2)×10−3 photons per pulse, with a total efficiency of (9.5±0.5)%.
Text
PhysRevLett.116.090501
- Version of Record
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Accepted/In Press date: 15 October 2015
Published date: 3 March 2016
Identifiers
Local EPrints ID: 443893
URI: http://eprints.soton.ac.uk/id/eprint/443893
ISSN: 0031-9007
PURE UUID: ba125e94-8d7a-4460-9b9c-15156f18d828
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Date deposited: 16 Sep 2020 16:34
Last modified: 17 Mar 2024 04:03
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Contributors
Author:
D. J. Saunders
Author:
J. H. D. Munns
Author:
T. F. M. Champion
Author:
C. Qiu
Author:
K. T. Kaczmarek
Author:
E. Poem
Author:
I. A. Walmsley
Author:
J. Nunn
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