The University of Southampton
University of Southampton Institutional Repository

Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy

Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy
Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy
In this paper we present single heterojunction p-i-n GaAsSbN/GaAs solar cells grown by lowtemperature liquid-phase epitaxy (LPE) – this is of interest as a component of multi-junction solar cell devices. The quaternary absorber layer was characterized by low excitation power photoluminescence to give the temperature dependence of the band gap. This conformed to the Varshni function at low temperatures to within 10 meV, indicating relatively small alloy potential fluctuations. The absorption properties and the transport of the photogenerated carriers in the heterostructures was investigated using surface photovoltage method. A power conversion efficiency of 4.15 % (AM1.5, 1000 W.m-2) was measured for p-i-n GaAsSbN/GaAs solar cells, which is comparable to the efficiency of MOCVD grown devices of this type. This is promising for the first report of LPE grown GaAsSbN/GaAs solar cells since the current record efficiency for the cells based on these compounds grown by MBE stands just at 6 %. The long-wavelength photosensitivity of the cells determined from external quantum efficiency and surface photovoltage measurements was shown to be extended to 1040 nm.
0038-092X
Milanova, Malina
fb8e80cb-a74f-41fb-be01-f25f7fc6d652
Donchev, Vesselin
258a3768-cca5-4b2a-b09e-41e754eb1280
Cheetham, Kieran
24dc2e8b-50a2-438d-aa37-b4d9874d0883
Cao, Zhongming
9aab55f2-8dba-4970-808e-3189f86dcd92
Sandall, Ian
ae69ce80-880e-437f-bc9a-1abcfc1b26f6
Piana, Giacomo
3154f35e-0273-453f-b3b9-97b19d8d856e
Hutter, Oliver S.
20dd53ef-5563-43eb-a79a-3e63b24907d1
Durose, Ken
5a97c97a-67ce-473b-aeb5-ab041a70fa5d
Mumtaz, Asim
49f7fb81-d4e3-4084-b1b8-304a392941c0
Milanova, Malina
fb8e80cb-a74f-41fb-be01-f25f7fc6d652
Donchev, Vesselin
258a3768-cca5-4b2a-b09e-41e754eb1280
Cheetham, Kieran
24dc2e8b-50a2-438d-aa37-b4d9874d0883
Cao, Zhongming
9aab55f2-8dba-4970-808e-3189f86dcd92
Sandall, Ian
ae69ce80-880e-437f-bc9a-1abcfc1b26f6
Piana, Giacomo
3154f35e-0273-453f-b3b9-97b19d8d856e
Hutter, Oliver S.
20dd53ef-5563-43eb-a79a-3e63b24907d1
Durose, Ken
5a97c97a-67ce-473b-aeb5-ab041a70fa5d
Mumtaz, Asim
49f7fb81-d4e3-4084-b1b8-304a392941c0

Milanova, Malina, Donchev, Vesselin, Cheetham, Kieran, Cao, Zhongming, Sandall, Ian, Piana, Giacomo, Hutter, Oliver S., Durose, Ken and Mumtaz, Asim (2020) Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy. Solar Energy. (In Press)

Record type: Article

Abstract

In this paper we present single heterojunction p-i-n GaAsSbN/GaAs solar cells grown by lowtemperature liquid-phase epitaxy (LPE) – this is of interest as a component of multi-junction solar cell devices. The quaternary absorber layer was characterized by low excitation power photoluminescence to give the temperature dependence of the band gap. This conformed to the Varshni function at low temperatures to within 10 meV, indicating relatively small alloy potential fluctuations. The absorption properties and the transport of the photogenerated carriers in the heterostructures was investigated using surface photovoltage method. A power conversion efficiency of 4.15 % (AM1.5, 1000 W.m-2) was measured for p-i-n GaAsSbN/GaAs solar cells, which is comparable to the efficiency of MOCVD grown devices of this type. This is promising for the first report of LPE grown GaAsSbN/GaAs solar cells since the current record efficiency for the cells based on these compounds grown by MBE stands just at 6 %. The long-wavelength photosensitivity of the cells determined from external quantum efficiency and surface photovoltage measurements was shown to be extended to 1040 nm.

Text
Single-junction solar cells based on p-i-n GaAsSbN heterostructures grown by liquid phase epitaxy - Accepted Manuscript
Download (639kB)

More information

Accepted/In Press date: 11 August 2020

Identifiers

Local EPrints ID: 443909
URI: http://eprints.soton.ac.uk/id/eprint/443909
ISSN: 0038-092X
PURE UUID: 71fd50aa-2246-4c82-9dd7-efa35f4fb76d

Catalogue record

Date deposited: 16 Sep 2020 16:34
Last modified: 11 Aug 2021 04:01

Export record

Contributors

Author: Malina Milanova
Author: Vesselin Donchev
Author: Kieran Cheetham
Author: Zhongming Cao
Author: Ian Sandall
Author: Giacomo Piana
Author: Oliver S. Hutter
Author: Ken Durose
Author: Asim Mumtaz

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×