Integration of low loss vertical slot waveguides on SOI photonic platforms for high efficiency carrier accumulation modulators
Integration of low loss vertical slot waveguides on SOI photonic platforms for high efficiency carrier accumulation modulators
Silicon accumulation type modulators offer prospects of high power efficiency, large bandwidth and high voltage phase linearity making them promising candidates for a number of advanced electro-optic applications. A significant challenge in the realisation of such a modulator is the fabrication of the passive waveguide structure which requires a thin dielectric layer to be positioned within the waveguide, i.e. slotted waveguides. Simultaneously, the fabricated slotted waveguide should be integrated with conventional rib waveguides with negligible optical transition losses. Here, successful integration of polysilicon and silicon slot waveguides enabling a low propagation loss 0.4-1.2 dB/mm together with an ultra-small optical mode conversion loss 0.04 dB between rib and slot waveguides is demonstrated. These fabricated slot waveguide with dielectric thermal SiO2 layer thicknesses around 6 nm, 8 nm and 10 nm have been characterized under transmission electron microscopy allowing for strong carrier accumulation effects for MOS-capacitor electro-optic modulators.
23143-23153
Zhang, Weiwei
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Ebert, Martin
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Chen, Bigeng
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Reynolds, Jamie Dean
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Yan, Xingzhao
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Du, Han
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Banakar, Mehdi
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Tran, D.T.
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Debnath, Kapil
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Littlejohns, Callum
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Saito, Shinichi
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Thomson, David
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3 August 2020
Zhang, Weiwei
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Ebert, Martin
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Chen, Bigeng
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Reynolds, Jamie Dean
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Yan, Xingzhao
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Du, Han
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Banakar, Mehdi
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Tran, D.T.
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Debnath, Kapil
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Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Saito, Shinichi
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Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Zhang, Weiwei, Ebert, Martin, Chen, Bigeng, Reynolds, Jamie Dean, Yan, Xingzhao, Du, Han, Banakar, Mehdi, Tran, D.T., Debnath, Kapil, Littlejohns, Callum, Saito, Shinichi and Thomson, David
(2020)
Integration of low loss vertical slot waveguides on SOI photonic platforms for high efficiency carrier accumulation modulators.
Optics Express, 28 (16), .
(doi:10.1364/OE.397044).
Abstract
Silicon accumulation type modulators offer prospects of high power efficiency, large bandwidth and high voltage phase linearity making them promising candidates for a number of advanced electro-optic applications. A significant challenge in the realisation of such a modulator is the fabrication of the passive waveguide structure which requires a thin dielectric layer to be positioned within the waveguide, i.e. slotted waveguides. Simultaneously, the fabricated slotted waveguide should be integrated with conventional rib waveguides with negligible optical transition losses. Here, successful integration of polysilicon and silicon slot waveguides enabling a low propagation loss 0.4-1.2 dB/mm together with an ultra-small optical mode conversion loss 0.04 dB between rib and slot waveguides is demonstrated. These fabricated slot waveguide with dielectric thermal SiO2 layer thicknesses around 6 nm, 8 nm and 10 nm have been characterized under transmission electron microscopy allowing for strong carrier accumulation effects for MOS-capacitor electro-optic modulators.
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Accepted/In Press date: 30 June 2020
Published date: 3 August 2020
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© 2020 OSA - The Optical Society. All rights reserved.
Identifiers
Local EPrints ID: 444185
URI: http://eprints.soton.ac.uk/id/eprint/444185
ISSN: 1094-4087
PURE UUID: da60c7eb-c7e7-4e1d-9853-e4d8c78ecb09
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Date deposited: 30 Sep 2020 17:04
Last modified: 17 Mar 2024 03:29
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Contributors
Author:
Weiwei Zhang
Author:
Martin Ebert
Author:
Bigeng Chen
Author:
Jamie Dean Reynolds
Author:
Xingzhao Yan
Author:
Han Du
Author:
Mehdi Banakar
Author:
D.T. Tran
Author:
Kapil Debnath
Author:
Callum Littlejohns
Author:
Shinichi Saito
Author:
David Thomson
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