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Integration of low loss vertical slot waveguides on SOI photonic platforms for high efficiency carrier accumulation modulators

Integration of low loss vertical slot waveguides on SOI photonic platforms for high efficiency carrier accumulation modulators
Integration of low loss vertical slot waveguides on SOI photonic platforms for high efficiency carrier accumulation modulators
Silicon accumulation type modulators offer prospects of high power efficiency, large bandwidth and high voltage phase linearity making them promising candidates for a number of advanced electro-optic applications. A significant challenge in the realisation of such a modulator is the fabrication of the passive waveguide structure which requires a thin dielectric layer to be positioned within the waveguide, i.e. slotted waveguides. Simultaneously, the fabricated slotted waveguide should be integrated with conventional rib waveguides with negligible optical transition losses. Here, successful integration of polysilicon and silicon slot waveguides enabling a low propagation loss 0.4-1.2 dB/mm together with an ultra-small optical mode conversion loss 0.04 dB between rib and slot waveguides is demonstrated. These fabricated slot waveguide with dielectric thermal SiO2 layer thicknesses around 6 nm, 8 nm and 10 nm have been characterized under transmission electron microscopy allowing for strong carrier accumulation effects for MOS-capacitor electro-optic modulators.
1094-4087
23143-23153
Zhang, Weiwei
1a783f97-c5ac-49e9-a5a0-49b8b2efab36
Ebert, Martin
1a8f1756-d724-4b44-8504-c01f8dc7aa50
Chen, Bigeng
e533448b-095e-4a9f-924c-301f4aa3007b
Reynolds, Jamie Dean
96faa744-02ee-458c-8e48-953ea9e54afe
Yan, Xingzhao
e1f3f636-74e4-42d5-81c7-04feec2b85ba
Du, Han
f68d2391-e6fb-4fbc-bbe0-86ce9a871352
Banakar, Mehdi
ad56fc0a-728c-4abb-8be5-74318bb2758e
Tran, D.T.
6de809a8-3890-4b2a-b546-55302bf0aba4
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda
Zhang, Weiwei
1a783f97-c5ac-49e9-a5a0-49b8b2efab36
Ebert, Martin
1a8f1756-d724-4b44-8504-c01f8dc7aa50
Chen, Bigeng
e533448b-095e-4a9f-924c-301f4aa3007b
Reynolds, Jamie Dean
96faa744-02ee-458c-8e48-953ea9e54afe
Yan, Xingzhao
e1f3f636-74e4-42d5-81c7-04feec2b85ba
Du, Han
f68d2391-e6fb-4fbc-bbe0-86ce9a871352
Banakar, Mehdi
ad56fc0a-728c-4abb-8be5-74318bb2758e
Tran, D.T.
6de809a8-3890-4b2a-b546-55302bf0aba4
Debnath, Kapil
aa01749d-524b-4464-b90a-af072e92a02f
Littlejohns, Callum
d2837f04-0a83-4bf9-acb2-618aa42a0cad
Saito, Shinichi
14a5d20b-055e-4f48-9dda-267e88bd3fdc
Thomson, David
17c1626c-2422-42c6-98e0-586ae220bcda

Zhang, Weiwei, Ebert, Martin, Chen, Bigeng, Reynolds, Jamie Dean, Yan, Xingzhao, Du, Han, Banakar, Mehdi, Tran, D.T., Debnath, Kapil, Littlejohns, Callum, Saito, Shinichi and Thomson, David (2020) Integration of low loss vertical slot waveguides on SOI photonic platforms for high efficiency carrier accumulation modulators. Optics Express, 28 (16), 23143-23153. (doi:10.1364/OE.397044).

Record type: Article

Abstract

Silicon accumulation type modulators offer prospects of high power efficiency, large bandwidth and high voltage phase linearity making them promising candidates for a number of advanced electro-optic applications. A significant challenge in the realisation of such a modulator is the fabrication of the passive waveguide structure which requires a thin dielectric layer to be positioned within the waveguide, i.e. slotted waveguides. Simultaneously, the fabricated slotted waveguide should be integrated with conventional rib waveguides with negligible optical transition losses. Here, successful integration of polysilicon and silicon slot waveguides enabling a low propagation loss 0.4-1.2 dB/mm together with an ultra-small optical mode conversion loss 0.04 dB between rib and slot waveguides is demonstrated. These fabricated slot waveguide with dielectric thermal SiO2 layer thicknesses around 6 nm, 8 nm and 10 nm have been characterized under transmission electron microscopy allowing for strong carrier accumulation effects for MOS-capacitor electro-optic modulators.

Full text not available from this repository.

More information

Accepted/In Press date: 30 June 2020
Published date: 20 July 2020

Identifiers

Local EPrints ID: 444185
URI: http://eprints.soton.ac.uk/id/eprint/444185
ISSN: 1094-4087
PURE UUID: da60c7eb-c7e7-4e1d-9853-e4d8c78ecb09
ORCID for Bigeng Chen: ORCID iD orcid.org/0000-0003-4925-2308
ORCID for Jamie Dean Reynolds: ORCID iD orcid.org/0000-0002-0072-0134
ORCID for Shinichi Saito: ORCID iD orcid.org/0000-0003-1539-1182

Catalogue record

Date deposited: 30 Sep 2020 17:04
Last modified: 07 Oct 2020 07:08

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