Spectrotemporal Gain Bandwidth Measurement in an InGaAs/GaAsP Quantum Well Vertical-External-Cavity Surface-Emitting Semiconductor Laser
Spectrotemporal Gain Bandwidth Measurement in an InGaAs/GaAsP Quantum Well Vertical-External-Cavity Surface-Emitting Semiconductor Laser
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
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Hoogland, S.
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Garnache, A.
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Wilcox, K.G.
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Mihoubi, Z.
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Elsmere, S.
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Quarterman, A.
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Tropper, A.C.
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2008
Hoogland, S.
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Garnache, A.
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Wilcox, K.G.
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Mihoubi, Z.
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Elsmere, S.
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Quarterman, A.
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Tropper, A.C.
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Hoogland, S., Garnache, A., Wilcox, K.G., Mihoubi, Z., Elsmere, S., Quarterman, A. and Tropper, A.C.
(2008)
Spectrotemporal Gain Bandwidth Measurement in an InGaAs/GaAsP Quantum Well Vertical-External-Cavity Surface-Emitting Semiconductor Laser.
In 2008 Conference on Lasers and Electro-Optics and Quantum Electronics and Laser Science Conference (CLEO/QELS).
IEEE.
.
(doi:10.1109/CLEO.2008.4551843).
Record type:
Conference or Workshop Item
(Paper)
Abstract
Analysis of spectral condensation in a VECSEL with a near-antiresonant gain structure incorporating InGaAs/GaAsP quantum wells emitting around 1030 nm shows the effective FWHM gain bandwidth of this laser to be 32 nm.
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Published date: 2008
Venue - Dates:
CLEO/QELS 2008, California, USA, San Jose, United States, 2008-05-04 - 2008-05-09
Identifiers
Local EPrints ID: 444411
URI: http://eprints.soton.ac.uk/id/eprint/444411
PURE UUID: 88d2a876-d954-455e-ad3c-87e5e3e44258
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Date deposited: 16 Oct 2020 16:32
Last modified: 16 Mar 2024 09:15
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Contributors
Author:
S. Hoogland
Author:
A. Garnache
Author:
K.G. Wilcox
Author:
Z. Mihoubi
Author:
S. Elsmere
Author:
A. Quarterman
Author:
A.C. Tropper
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