Origin of improved tunability and loss in N2 annealed barium strontium titanate films
Origin of improved tunability and loss in N2 annealed barium strontium titanate films
Barium strontium titanate (BSTO) thin films were deposited on Pt(111) by high throughput evaporative physical vapor deposition and then annealed at 650 °C for 30 min under N2 atmosphere. Using advanced transmission electron microscopy, energy-dispersive x-ray spectroscopy and electron energy-loss spectroscopy, we directly show that not only does N substitute for O in the BSTO lattice but that it also compensates for Ti3+ ions, suppressing conductivity, thereby reducing dielectric loss and enhancing dielectric tunability. However, this effect is negated near the film edge where we speculate that exposed Pt acts as a reservoir of adsorbed/absorbed O and alters the local N2 concentration during annealing.
Dielectric tunability, high throughput physical vapour deposition, oxygen vacancies
Mostaed, Ali
2e1a8d24-586d-4489-9204-75e81e0e27cb
Bakaimi, Ioanna
3c4e7000-517c-41fa-84db-c45641125e4d
Hayden, Brian
aea74f68-2264-4487-9d84-5b12ddbbb331
Sinclair, Derek C.
519702cf-4676-434c-b471-56ffd60d442f
Reaney, Ian M.
0b432c38-9406-4216-aff4-a42bba70527b
18 September 2020
Mostaed, Ali
2e1a8d24-586d-4489-9204-75e81e0e27cb
Bakaimi, Ioanna
3c4e7000-517c-41fa-84db-c45641125e4d
Hayden, Brian
aea74f68-2264-4487-9d84-5b12ddbbb331
Sinclair, Derek C.
519702cf-4676-434c-b471-56ffd60d442f
Reaney, Ian M.
0b432c38-9406-4216-aff4-a42bba70527b
Mostaed, Ali, Bakaimi, Ioanna, Hayden, Brian, Sinclair, Derek C. and Reaney, Ian M.
(2020)
Origin of improved tunability and loss in N2 annealed barium strontium titanate films.
Physical Review Materials, 4 (9), [094410].
(doi:10.1103/PhysRevMaterials.4.094410).
Abstract
Barium strontium titanate (BSTO) thin films were deposited on Pt(111) by high throughput evaporative physical vapor deposition and then annealed at 650 °C for 30 min under N2 atmosphere. Using advanced transmission electron microscopy, energy-dispersive x-ray spectroscopy and electron energy-loss spectroscopy, we directly show that not only does N substitute for O in the BSTO lattice but that it also compensates for Ti3+ ions, suppressing conductivity, thereby reducing dielectric loss and enhancing dielectric tunability. However, this effect is negated near the film edge where we speculate that exposed Pt acts as a reservoir of adsorbed/absorbed O and alters the local N2 concentration during annealing.
Text
PRM_Mostaed_Bakaimi_Hayden
- Accepted Manuscript
More information
Accepted/In Press date: 2 September 2020
e-pub ahead of print date: 18 September 2020
Published date: 18 September 2020
Additional Information:
Funding Information:
The authors acknowledge the Engineering and Physical Sciences Research Council (EPSRC) Grants No. EP/N032470/1 and EP/N032233/1 and the Henry Royce Institute for Advanced Materials, funded through EPSRC Grant No. EP/R00661X/1 for JEOL JEM-F200 access at Royce@Sheffield.
Publisher Copyright:
©2020 American Physical Society.
Keywords:
Dielectric tunability, high throughput physical vapour deposition, oxygen vacancies
Identifiers
Local EPrints ID: 444637
URI: http://eprints.soton.ac.uk/id/eprint/444637
ISSN: 2475-9953
PURE UUID: 9ce6d7fc-622d-403c-8fca-d8206617c0a9
Catalogue record
Date deposited: 28 Oct 2020 17:30
Last modified: 17 Mar 2024 03:45
Export record
Altmetrics
Contributors
Author:
Ali Mostaed
Author:
Derek C. Sinclair
Author:
Ian M. Reaney
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics
