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Origin of improved tunability and loss in N2 annealed barium strontium titanate films

Origin of improved tunability and loss in N2 annealed barium strontium titanate films
Origin of improved tunability and loss in N2 annealed barium strontium titanate films
Barium strontium titanate (BSTO) thin films were deposited on Pt(111) by high throughput evaporative physical vapor deposition and then annealed at 650 °C for 30 min under N2 atmosphere. Using advanced transmission electron microscopy, energy-dispersive x-ray spectroscopy and electron energy-loss spectroscopy, we directly show that not only does N substitute for O in the BSTO lattice but that it also compensates for Ti3+ ions, suppressing conductivity, thereby reducing dielectric loss and enhancing dielectric tunability. However, this effect is negated near the film edge where we speculate that exposed Pt acts as a reservoir of adsorbed/absorbed O and alters the local N2 concentration during annealing.
oxygen vacancies, high throughput physical vapour deposition, Dielectric tunability
2475-9953
Mostaed, Ali
2e1a8d24-586d-4489-9204-75e81e0e27cb
Bakaimi, Ioanna
3c4e7000-517c-41fa-84db-c45641125e4d
Hayden, Brian
aea74f68-2264-4487-9d84-5b12ddbbb331
Sinclair, Derek C.
519702cf-4676-434c-b471-56ffd60d442f
Reaney, Ian M.
0b432c38-9406-4216-aff4-a42bba70527b
Mostaed, Ali
2e1a8d24-586d-4489-9204-75e81e0e27cb
Bakaimi, Ioanna
3c4e7000-517c-41fa-84db-c45641125e4d
Hayden, Brian
aea74f68-2264-4487-9d84-5b12ddbbb331
Sinclair, Derek C.
519702cf-4676-434c-b471-56ffd60d442f
Reaney, Ian M.
0b432c38-9406-4216-aff4-a42bba70527b

Mostaed, Ali, Bakaimi, Ioanna, Hayden, Brian, Sinclair, Derek C. and Reaney, Ian M. (2020) Origin of improved tunability and loss in N2 annealed barium strontium titanate films. Physical Review Materials, 4, [094410]. (doi:10.1103/PhysRevMaterials.4.094410).

Record type: Article

Abstract

Barium strontium titanate (BSTO) thin films were deposited on Pt(111) by high throughput evaporative physical vapor deposition and then annealed at 650 °C for 30 min under N2 atmosphere. Using advanced transmission electron microscopy, energy-dispersive x-ray spectroscopy and electron energy-loss spectroscopy, we directly show that not only does N substitute for O in the BSTO lattice but that it also compensates for Ti3+ ions, suppressing conductivity, thereby reducing dielectric loss and enhancing dielectric tunability. However, this effect is negated near the film edge where we speculate that exposed Pt acts as a reservoir of adsorbed/absorbed O and alters the local N2 concentration during annealing.

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PRM_Mostaed_Bakaimi_Hayden - Accepted Manuscript
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Accepted/In Press date: 2 September 2020
e-pub ahead of print date: 18 September 2020
Keywords: oxygen vacancies, high throughput physical vapour deposition, Dielectric tunability

Identifiers

Local EPrints ID: 444637
URI: http://eprints.soton.ac.uk/id/eprint/444637
ISSN: 2475-9953
PURE UUID: 9ce6d7fc-622d-403c-8fca-d8206617c0a9
ORCID for Ioanna Bakaimi: ORCID iD orcid.org/0000-0002-8083-4413
ORCID for Brian Hayden: ORCID iD orcid.org/0000-0002-7762-1812

Catalogue record

Date deposited: 28 Oct 2020 17:30
Last modified: 18 Feb 2021 17:30

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Contributors

Author: Ali Mostaed
Author: Ioanna Bakaimi ORCID iD
Author: Brian Hayden ORCID iD
Author: Derek C. Sinclair
Author: Ian M. Reaney

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