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100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale
100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale

Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.

718–725
Georgiadou, Dimitra
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Semple, James
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Sagade, Abhay A.
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Forstén, Henrik
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Rantakari, Pekka
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Lin, Yen-Hung
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Alkhalil, Feras
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Seitkhan, Akmaral
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Loganathan, Kalaivanan
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Faber, Hendrik
24330ca5-31d4-4821-abe0-2d21aa7b5e67
Anthopoulos, Thomas D.
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Georgiadou, Dimitra
84977176-3678-4fb3-a3dd-2044a49c853b
Semple, James
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Sagade, Abhay A.
0a34f47e-165f-44e2-bb57-b2c925e7e374
Forstén, Henrik
d21e4fe0-d286-45cd-9498-a6194b929c2c
Rantakari, Pekka
db6b8255-163b-4285-9133-ab17f027ff05
Lin, Yen-Hung
e20815a9-b02e-49f0-9b31-dca76ba66cb4
Alkhalil, Feras
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Seitkhan, Akmaral
97108725-37d5-4a4f-a72c-d3fe50121f19
Loganathan, Kalaivanan
8e214c5f-6aa3-4fec-ad87-355b28925ed2
Faber, Hendrik
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Anthopoulos, Thomas D.
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Georgiadou, Dimitra, Semple, James, Sagade, Abhay A., Forstén, Henrik, Rantakari, Pekka, Lin, Yen-Hung, Alkhalil, Feras, Seitkhan, Akmaral, Loganathan, Kalaivanan, Faber, Hendrik and Anthopoulos, Thomas D. (2020) 100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale. Nature Electronics, 3 (11), 718–725. (doi:10.1038/s41928-020-00484-7).

Record type: Article

Abstract

Inexpensive radio-frequency devices that can meet the ultrahigh-frequency needs of fifth- and sixth-generation wireless telecommunication networks are required. However, combining high performance with cost-effective scalable manufacturing has proved challenging. Here, we report the fabrication of solution-processed zinc oxide Schottky diodes that can operate in microwave and millimetre-wave frequency bands. The fully coplanar diodes are prepared using wafer-scale adhesion lithography to pattern two asymmetric metal electrodes separated by a gap of around 15 nm, and are completed with the deposition of a zinc oxide or aluminium-doped ZnO layer from solution. The Schottky diodes exhibit a maximum intrinsic cutoff frequency in excess of 100 GHz, and when integrated with other passive components yield radio-frequency energy-harvesting circuits that are capable of delivering output voltages of 600 mV and 260 mV at 2.45 GHz and 10 GHz, respectively.

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100 GHz zinc oxide Schottky diodes processed from solution on a wafer scale - Accepted Manuscript
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Accepted/In Press date: 9 September 2020
Published date: 19 October 2020
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Identifiers

Local EPrints ID: 444936
URI: http://eprints.soton.ac.uk/id/eprint/444936
PURE UUID: c0b0135f-e88a-4769-a914-d061bc9dc7d7
ORCID for Dimitra Georgiadou: ORCID iD orcid.org/0000-0002-2620-3346

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Date deposited: 12 Nov 2020 17:31
Last modified: 19 Apr 2021 04:01

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Contributors

Author: James Semple
Author: Abhay A. Sagade
Author: Henrik Forstén
Author: Pekka Rantakari
Author: Yen-Hung Lin
Author: Feras Alkhalil
Author: Akmaral Seitkhan
Author: Kalaivanan Loganathan
Author: Hendrik Faber
Author: Thomas D. Anthopoulos

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