Octa-glycidyl POSS: an epoxy filler or co-monomer?
Octa-glycidyl POSS: an epoxy filler or co-monomer?
Particle tethering with the matrix permits property
manipulation depending on the respective architecture and
chemistry. However, integration of highly reactive moieties into epoxy networks may detrimentally affect the cure reaction stoichiometry. In this study, octa glycidyl polyhedral oligomeric silsesquioxane (OG POSS) was utilized either as a filler (simple addition into epoxy) or as a co-monomer (stoichiometric addition
into epoxy) to explore related effects. The examined samples were characterized by differential scanning calorimetry, and dielectric spectroscopy. The simple addition of OG POSS resulted in a considerable Tg decrease due to impaired stoichiometry, while the stoichiometric addition moderated this effect; these results are supported by the dielectric relaxation behavior.
Riarh, Satpreet
079407c8-7920-4d99-acb4-05ed8d8b03a6
Vryonis, Orestis
4affde05-88f2-436f-b036-dceedf31ea9c
Vaughan, Alun
6d813b66-17f9-4864-9763-25a6d659d8a3
Riarh, Satpreet
079407c8-7920-4d99-acb4-05ed8d8b03a6
Vryonis, Orestis
4affde05-88f2-436f-b036-dceedf31ea9c
Vaughan, Alun
6d813b66-17f9-4864-9763-25a6d659d8a3
Riarh, Satpreet, Vryonis, Orestis and Vaughan, Alun
(2020)
Octa-glycidyl POSS: an epoxy filler or co-monomer?
In IEEE 2020 International Conference on Dielectrics (ICD).
(In Press)
Record type:
Conference or Workshop Item
(Paper)
Abstract
Particle tethering with the matrix permits property
manipulation depending on the respective architecture and
chemistry. However, integration of highly reactive moieties into epoxy networks may detrimentally affect the cure reaction stoichiometry. In this study, octa glycidyl polyhedral oligomeric silsesquioxane (OG POSS) was utilized either as a filler (simple addition into epoxy) or as a co-monomer (stoichiometric addition
into epoxy) to explore related effects. The examined samples were characterized by differential scanning calorimetry, and dielectric spectroscopy. The simple addition of OG POSS resulted in a considerable Tg decrease due to impaired stoichiometry, while the stoichiometric addition moderated this effect; these results are supported by the dielectric relaxation behavior.
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Accepted/In Press date: 1 July 2020
Identifiers
Local EPrints ID: 445578
URI: http://eprints.soton.ac.uk/id/eprint/445578
PURE UUID: ce7980b3-352b-485b-9a79-e2b43ff8f25f
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Date deposited: 16 Dec 2020 17:32
Last modified: 20 Jan 2024 02:53
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Contributors
Author:
Satpreet Riarh
Author:
Orestis Vryonis
Author:
Alun Vaughan
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