Post fabrication permanent laser trimming of silicon nitride photonic devices
Post fabrication permanent laser trimming of silicon nitride photonic devices
We demonstrated the possibility of trimming the operating wavelength of nitrogen-rich silicon nitride racetrack resonators by exposing the devices to an ultraviolet laser. The results revealed that in a few seconds only, the resonant wavelength of fabricated devices could be tuned to any point within a free spectral range. This technique can also be applied to trim the response of any other silicon photonic device based on nitrogen-rich silicon nitride.
De Paoli, Greta
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Jantzen, Senta Lisa
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Domínguez Bucio, Thalia
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Skandalos, Ilias
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Holmes, Christopher
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Smith, Peter G.R.
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Milošević, Milan M.
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Gardes, Frederic Y.
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De Paoli, Greta
eafc5c8a-e30a-40d1-a57e-0beb7f85af72
Jantzen, Senta Lisa
e532e171-8ea3-4576-8843-17d96a3995d4
Domínguez Bucio, Thalia
83b57799-c566-473c-9b53-92e9c50b4287
Skandalos, Ilias
3daa2bbe-f6ee-4b6e-ac57-46df0c21c732
Holmes, Christopher
16306bb8-8a46-4fd7-bb19-a146758e5263
Smith, Peter G.R.
8979668a-8b7a-4838-9a74-1a7cfc6665f6
Milošević, Milan M.
b28da945-84a5-4317-8896-6d9ea6a69589
Gardes, Frederic Y.
7a49fc6d-dade-4099-b016-c60737cb5bb2
De Paoli, Greta, Jantzen, Senta Lisa, Domínguez Bucio, Thalia, Skandalos, Ilias, Holmes, Christopher, Smith, Peter G.R., Milošević, Milan M. and Gardes, Frederic Y.
(2019)
Post fabrication permanent laser trimming of silicon nitride photonic devices.
In 2019 IEEE 2nd British and Irish Conference on Optics and Photonics (BICOP).
IEEE..
(doi:10.1109/BICOP48819.2019.9059592).
Record type:
Conference or Workshop Item
(Paper)
Abstract
We demonstrated the possibility of trimming the operating wavelength of nitrogen-rich silicon nitride racetrack resonators by exposing the devices to an ultraviolet laser. The results revealed that in a few seconds only, the resonant wavelength of fabricated devices could be tuned to any point within a free spectral range. This technique can also be applied to trim the response of any other silicon photonic device based on nitrogen-rich silicon nitride.
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e-pub ahead of print date: 11 December 2019
Venue - Dates:
2019 IEEE 2nd British and Irish Conference on Optics and Photonics, , London, United Kingdom, 2019-12-11 - 2019-12-13
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Local EPrints ID: 446440
URI: http://eprints.soton.ac.uk/id/eprint/446440
PURE UUID: 8f54899f-8cf9-40b0-ad6c-a84a8dbdd6e6
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Date deposited: 10 Feb 2021 17:30
Last modified: 09 Oct 2024 02:12
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