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UV induced resistive switching in hybrid polymer metal oxide memristors

UV induced resistive switching in hybrid polymer metal oxide memristors
UV induced resistive switching in hybrid polymer metal oxide memristors
There is an increasing interest for alternative ways to program memristive devices to arbitrary resistive levels. Among them, light-controlled programming approach, where optical input is used to improve or to promote the resistive switching, has drawn particular attention.
Here, we present a straight-forward method to induce resistive switching to a memristive device, introducing a new version of a metal-oxide memristive architecture coupled with a UV-sensitive hybrid top electrode obtained through direct surface treatment with PEDOT:PSS of an established resistive random access memory (RRAM) platform. UV-illumination ultimately results to resistive switching, without involving any additional stimulation, and a relation between the switching magnitude and the applied wavelength is depicted. Overall, the system and method presented showcase a promising proof-of-concept for granting an exclusively light-triggered resistive switching to memristive devices irrespectively of the structure and materials comprising their main core, and, in perspective can be considered for functional integrations optical-induced sensing.
2045-2322
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Tzouvadaki, Ioulia
a1025ec1-7606-453d-bc71-1f732a4c1f78
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Tzouvadaki, Ioulia
a1025ec1-7606-453d-bc71-1f732a4c1f78
Prodromakis, Themis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Stathopoulos, Spyros, Tzouvadaki, Ioulia and Prodromakis, Themis (2020) UV induced resistive switching in hybrid polymer metal oxide memristors. Scientific Reports, 10, [21130]. (doi:10.1038/s41598-020-78102-x).

Record type: Article

Abstract

There is an increasing interest for alternative ways to program memristive devices to arbitrary resistive levels. Among them, light-controlled programming approach, where optical input is used to improve or to promote the resistive switching, has drawn particular attention.
Here, we present a straight-forward method to induce resistive switching to a memristive device, introducing a new version of a metal-oxide memristive architecture coupled with a UV-sensitive hybrid top electrode obtained through direct surface treatment with PEDOT:PSS of an established resistive random access memory (RRAM) platform. UV-illumination ultimately results to resistive switching, without involving any additional stimulation, and a relation between the switching magnitude and the applied wavelength is depicted. Overall, the system and method presented showcase a promising proof-of-concept for granting an exclusively light-triggered resistive switching to memristive devices irrespectively of the structure and materials comprising their main core, and, in perspective can be considered for functional integrations optical-induced sensing.

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More information

Accepted/In Press date: 6 November 2020
e-pub ahead of print date: 3 December 2020

Identifiers

Local EPrints ID: 446959
URI: http://eprints.soton.ac.uk/id/eprint/446959
ISSN: 2045-2322
PURE UUID: 90e750df-4346-43aa-acac-22b722a51a06
ORCID for Spyros Stathopoulos: ORCID iD orcid.org/0000-0002-0833-6209
ORCID for Themis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

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Date deposited: 26 Feb 2021 17:37
Last modified: 27 Feb 2021 02:46

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