UV induced resistive switching in hybrid polymer metal oxide memristors

Stathopoulos, Spyros, Tzouvadaki, Ioulia and Prodromakis, Themis (2020) UV induced resistive switching in hybrid polymer metal oxide memristors. Scientific Reports, 10, [21130]. (doi:10.1038/s41598-020-78102-x).

Abstract

There is an increasing interest for alternative ways to program memristive devices to arbitrary resistive levels. Among them, light-controlled programming approach, where optical input is used to improve or to promote the resistive switching, has drawn particular attention.
Here, we present a straight-forward method to induce resistive switching to a memristive device, introducing a new version of a metal-oxide memristive architecture coupled with a UV-sensitive hybrid top electrode obtained through direct surface treatment with PEDOT:PSS of an established resistive random access memory (RRAM) platform. UV-illumination ultimately results to resistive switching, without involving any additional stimulation, and a relation between the switching magnitude and the applied wavelength is depicted. Overall, the system and method presented showcase a promising proof-of-concept for granting an exclusively light-triggered resistive switching to memristive devices irrespectively of the structure and materials comprising their main core, and, in perspective can be considered for functional integrations optical-induced sensing.

This record has no associated files available for download.

Contributors

Author: Spyros Stathopoulos

Author: Themis Prodromakis

Download statistics