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Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx

Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx
Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx
Silicon nanoclusters (Si-nc) can be efficient sensitisers of surrounding Er ions, making Er-doped silicon-rich silica material very appealing for 1.5µm amplifiers and lasers pumped by broadband sources. Recent reports of optical signal enhancement in waveguides based in this system have increased the interest even more. However, there is currently a debate on how many surrounding Er ions can one single nanocrystal excite. In fact, there is considerable experimental evidence that the fraction of Er ions excited by Si-nc is actually very low, of the order of few percent. We point out that excited state absorption (ESA) is a major cause for this low fraction of indirectly excitable Er.
0003-6951
1-3
Oton, Claudio J.
4a0d4431-ec5c-4ab5-ab41-34c9db3615cf
Loh, Wei H.
6d52f465-e491-4ec6-8d94-0a9833eabe52
Ahmad, Ijaz
5e3d7906-0fc4-404c-8b3d-f6cbd874a8f4
Kenyon, Anthony J.
1e816a53-7f8f-4a52-b140-46d7431c64af
Oton, Claudio J.
4a0d4431-ec5c-4ab5-ab41-34c9db3615cf
Loh, Wei H.
6d52f465-e491-4ec6-8d94-0a9833eabe52
Ahmad, Ijaz
5e3d7906-0fc4-404c-8b3d-f6cbd874a8f4
Kenyon, Anthony J.
1e816a53-7f8f-4a52-b140-46d7431c64af

Oton, Claudio J., Loh, Wei H., Ahmad, Ijaz and Kenyon, Anthony J. (2006) Er3+ excited state absorption and the low fraction of nanocluster-excitable Er3+ in SiOx. Applied Physics Letters, 89 (3), 1-3. (doi:10.1063/1.2227637).

Record type: Article

Abstract

Silicon nanoclusters (Si-nc) can be efficient sensitisers of surrounding Er ions, making Er-doped silicon-rich silica material very appealing for 1.5µm amplifiers and lasers pumped by broadband sources. Recent reports of optical signal enhancement in waveguides based in this system have increased the interest even more. However, there is currently a debate on how many surrounding Er ions can one single nanocrystal excite. In fact, there is considerable experimental evidence that the fraction of Er ions excited by Si-nc is actually very low, of the order of few percent. We point out that excited state absorption (ESA) is a major cause for this low fraction of indirectly excitable Er.

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e-pub ahead of print date: 20 July 2006
Published date: 2006
Venue - Dates: 2006 MRS Fall Meeting, , Boston, United States, 2006-11-27 - 2006-12-01

Identifiers

Local EPrints ID: 44764
URI: http://eprints.soton.ac.uk/id/eprint/44764
ISSN: 0003-6951
PURE UUID: 40e5531a-9d58-4082-92dc-7c15782b4f58

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Date deposited: 14 Mar 2007
Last modified: 15 Mar 2024 09:07

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Contributors

Author: Claudio J. Oton
Author: Wei H. Loh
Author: Ijaz Ahmad
Author: Anthony J. Kenyon

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