READ ME file for DATA set for article titled ‘Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors’

DATASET DOI: 10.5258/SOTON/D1485

Licence: CC BY

Date of data production: 29/11/2018 - 30/11/2018

READ ME author: Joseph William Hillier, ECS, Faculty of Engineering and Physical Sciences, University of Southampton, SO17 1BJ, UK

This dataset supports the publication:
AUTHORS:  J. W. Hillier, K. Ono, K. Ibukuro, F. Liu, Z. Li, M. K. Husain, H. N. Rutt, I. Tomita, Y. Tsuchiya, K. Ishibashi, and S. Saito 
TITLE: ‘Probing hole spin transport of disorder quantum dots via Pauli spin-blockade in standard silicon transistors’
JOURNAL: IOP Nanotechnology

This dataset contains:
All figures that appear in the publication in the folder “Figures”.
Raw data for measurement for each figure in the folder “Raw_data”.

Figures in the publication (Figure 1, 2, 3, 4 and 5) correspond to the files in the folder “Figures” as follows;

Figure1; Figure1.png
Figure2; Figure2.png
Figure3; Figure3.png
Figure4; Figure4.png
Figure5; Figure5.png



Figure 1 consists of diagrams created on Inkscape and PowerPoint, Figures 2, 3, 4 and 5 were generated based on experimental data as well as diagrams in PowerPoint. Below are the explanations of how each figure was generated using the raw data.

Figure 1


(a)

Schematic of pMOS device measured with dimensions, created in Inkscape. 

(b)

Schematic of device cross-section, created in PowerPoint.

(c)

Energy band diagram, created in Inkscape.

Figure 2

Data for Figure 2 (a)-(c) was collected at 1.6 K by biasing the gate and source terminals whilst measuring drain current and then plotted using Matlab. Figures 2.(d)-(f) are simplified diagrams based on the data shown in Figures 2.(a)-(c) created in PowerPoint. Figures (g)-(i) are energy band diagrams created on PowerPoint.


The following data were used;
1 V well CSD_-640mV_-700mV_Vg_301_10^-10A.csv
2 V well CSD_-690mV_-750mV_Vg_301_10^-10A.csv
3 V well CSD_-725mV_-785mV_Vg_301_10^-10A.csv

(a)

The following data were used;
1 V well CSD_-640mV_-700mV_Vg_301_10^-10A.csv

The differential conductance matrix was generated in MATLAB by the change in drain current divided by change in source voltage and plotted against gate voltage at a well voltage of 1 V.

A matrix for gate voltage (-0.640 V to -0.7 V in 0.0002 V increments for 301 1x301 strings), source voltage (column A, row 1-end) for 301 1x301 strings and drain current (column B, row 1-end) for 301 1x301 strings was created using file:

1 V well CSD_-640mV_-700mV_Vg_301_10^-10A.csv

The entire data set was plotted in (a).

N.B source voltage is in Volts and saved a factor of 10 larger than applied, due to a converter used for higher resolution, i.e -0.3 V = -0.03 V. Drain current is saved in Volts with a negative polarity from amplifier output where 1 V = -10^-10 A, which must be used to convert.

(b)

The following data were used;
2 V well CSD_-690mV_-750mV_Vg_301_10^-10A.csv

The differential conductance matrix was generated in MATLAB by the change in drain current divided by change in source voltage and plotted against gate voltage at a well voltage of 2 V.

A matrix for gate voltage (-0.690 V to -0.750 V in 0.0002 V increments for 301 1x301 strings), source voltage (column A, row 1-end) for 301 1x301 strings and drain current (column B, row 1-end) for 301 1x301 strings was created using file:

2 V well CSD_-690mV_-750mV_Vg_301_10^-10A.csv

The entire data set was plotted in (b).

N.B source voltage is in Volts and saved a factor of 10 larger than applied, due to a converter used for higher resolution, i.e -0.3 V = -0.03 V. Drain current is saved in Volts with a negative polarity from amplifier output where 1 V = -10^-10 A, which must be used to convert.

(c)

The following data were used;
3 V well CSD_-725mV_-785mV_Vg_301_10^-10A.csv

The differential conductance matrix was generated in MATLAB by the change in drain current divided by change in source voltage and plotted against gate voltage at a well voltage of 3 V.

A matrix for gate voltage (-0.690 V to -0.750 V in 0.0002 V increments for 301 1x301 strings), source voltage (column A, row 1-end) for 301 1x301 strings and drain current (column B, row 1-end) for 301 1x301 strings was created using file:

2 V well CSD_-725mV_-785mV_Vg_301_10^-10A.csv

The entire data set was plotted in (c).

N.B source voltage is in Volts and saved a factor of 10 larger than applied, due to a converter used for higher resolution, i.e -0.3 V = -0.03 V. Drain current is saved in Volts with a negative polarity from amplifier output where 1 V = -10^-10 A, which must be used to convert.

(d)-(f)

Simplified charge stability diagrams based on Figures 2.(a)-(c), created in Powerpoint.

(g)-(i)

Energy band diagrams created in PowerPoint.

TABLE I

The charging properties displayed in this table were calculated using Figure 2.(a)-(c) by the Coulomb diamond peaks (for Ec) and estimating the gate voltage width between each Coulomb diamond (for Cg).


Figure 3

Figures 3 (a)-(b) was collected at 1.6 K by biasing the gate and source terminals whilst measuring drain current, converted into a matrix and then plotted using MATLAB. Figures 3 (c)-(f) are energy band diagrams created in PowerPoint.

The following data were used;
2 V well CSD_-700mV_-775mV_Vg_301_10^-11A.csv

(a)

The following data was used;
2 V well CSD_-700mV_-775mV_Vg_301_10^-11A.csv


A current matrix for gate voltage (-0.7 V to -0.775 V in 0.0001 V increments for 601 1x751 strings), source voltage (column A, row 1-end) for 751 1x601 strings and drain current (column B, row 1-end) for 751 1x601 strings was created using file:

2 V well CSD_-700mV_-775mV_Vg_301_10^-11A.csv

Using the 751x601 matrix, the row corresponding to a source voltage of 12.5 mV for a gate voltage of -0.740 V to -0.700 V was plotted in origin.

N.B source voltage is in Volts and saved a factor of 10 larger than applied, due to a converter used for higher resolution, i.e -0.3 V = -0.03 V. Drain current is saved in Volts with a negative polarity from amplifier output where 1 V = -10^-11 A, which must be used to convert.

(b)


The following data was used;
2 V well CSD_-700mV_-775mV_Vg_301_10^-11A.csv


A current matrix for gate voltage (-0.7 V to -0.775 V in 0.0001 V increments for 601 1x751 strings), source voltage (column A, row 1-end) for 751 1x601 strings and drain current (column B, row 1-end) for 751 1x601 strings was created using file:

2 V well CSD_-700mV_-775mV_Vg_301_10^-11A.csv

Using the 751x601 matrix, the column corresponding to a gate voltage of -725 mV for a source voltage of 6 mV to 18 mV was plotted in origin.

N.B source voltage is in Volts and saved a factor of 10 larger than applied, due to a converter used for higher resolution, i.e -0.3 V = -0.03 V. Drain current is saved in Volts with a negative polarity from amplifier output where 1 V = -10^-11 A, which must be used to convert.

(c)-(f)

Energy band diagrams, created in PowerPoint.


Figure 4

Figures 4 (a)-(c) were collected at 1.6 K by biasing the gate and source terminals whilst measuring drain current (in addition to an external magnetic field in (b) and (c)) and then plotted using MATLAB. Figure 4 (d) and (e) are energy band diagrams created on PowerPoint.

The following data were used;
2 V well CSD_-700mV_-775mV_Vg_301_10^-11A.csv
2 V well_-2T_2T_B-field_15mV_Vsd_-705mV_-725mV_Vg_10^-11A.csv
2 V well -1T_1T_B-field_15mV_Vs -722 to -732mV_Vg_10^-11A.csv

(a)

The following data was used;
2 V well CSD_-700mV_-775mV_Vg_301_10^-11A.csv

The differential conductance matrix was generated in MATLAB by the change in drain current divided by change in source voltage and plotted against gate voltage at a well voltage of 2 V.

A matrix for gate voltage (-0.7 V to -0.775 V in 0.0001 V increments for 601 1x751 strings), source voltage (column A, row 1-end) for 751 1x601 strings and drain current (column B, row 1-end) for 751 1x601 strings was created using file:

2 V well CSD_-700mV_-775mV_Vg_301_10^-11A.csv

Only 0 V to 0.02 V source voltage and -0.740 V to -0.705 V gate voltage was plotted in (a).

N.B source voltage is in Volts and saved a factor of 10 larger than applied, due to a converter used for higher resolution, i.e -0.3 V = -0.03 V. Drain current is saved in Volts with a negative polarity from amplifier output where 1 V = -10^-11 A, which must be used to convert.

(b) 

The following data was used;
2 V well_-2T_2T_B-field_15mV_Vsd_-705mV_-725mV_Vg_10^-11A.csv

The current matrix was generated in MATLAB by plotting the magnetic field against gate voltage at a well voltage of 2 V and source voltage of 0.015 V.

A matrix for magnetic field (-2 T to 2 T in 0.008 T increments for 201 1x501 strings), gate voltage (column A, row 1-end) for 501 1x201 strings and drain current (column B, row 1-end) for 501 1x201 strings was created using file:

2 V well_-2T_2T_B-field_15mV_Vsd_-705mV_-725mV_Vg_10^-11A.csv

Only -0.715 V to 0.725 V gate voltage against -2T to 2T B-field was plotted in (b).

N.B Drain current is saved in Volts with a negative polarity from amplifier output where 1 V = -10^-11 A, which must be used to convert.

(c)

The following data was used;
2 V well -1T_1T_B-field_15mV_Vs -722 to -732mV_Vg_10^-11A.csv

The current matrix was generated in MATLAB by plotting the magnetic field against gate voltage at a well voltage of 2 V and source voltage of 0.015 V.

A matrix for magnetic field (-1 T to 1 T in 0.008 T increments for 101 1x251 strings), gate voltage (column A, row 1-end) for 251 1x101 strings and drain current (column B, row 1-end) for 251 1x101 strings was created using file:

2 V well -1T_1T_B-field_15mV_Vs -722 to -732mV_Vg_10^-11A.csv

Only -0.723 V to 0.728 V gate voltage against -1T to 1T magnetic-field was plotted in (c).

N.B Drain current is saved in Volts with a negative polarity from amplifier output where 1 V = -10^-11 A, which must be used to convert.

(d) and (e)

Energy band diagrams, created in PowerPoint. 


Figure 5

The following data was used;
2 V well profile_-1T_1T_B-field_-724mV_Vg_15mV_Vsd_10^-11A.csv

The current profile was generated in MATLAB by plotting the magnetic field against drain current at a well voltage of 2 V, source voltage of 0.015 V and gate voltage of -0.724 V.

An array for magnetic field in (column A, row 1-end) for 1 1x2001 string and drain current (column B, row 1-end) for 1 1x2001 string was created using file:

2 V well profile_-1T_1T_B-field_-724mV_Vg_15mV_Vsd_10^-11A.csv

A fitting (red) was then applied to the peaks within the plot using equation (1) in the manuscript to extract a tunnelling coupling (t).