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Ultrafast nonequilibrium dynamic process of separate electrons and holes during exciton formation in few-layer tungsten disulfide

Ultrafast nonequilibrium dynamic process of separate electrons and holes during exciton formation in few-layer tungsten disulfide
Ultrafast nonequilibrium dynamic process of separate electrons and holes during exciton formation in few-layer tungsten disulfide
Femtosecond transient absorption spectroscopy has been employed to unravel separate initial nonequilibrium dynamic processes of photo-injected electrons and holes during the formation process of the lowest excitons at the K-valley in few-layer tungsten disulfide. Charge carrier thermalization and cooling, as well as concomitant many-body effects on the exciton resonances, are distinguished. The thermalization of holes is observed to be faster than that of electrons. Both of them proceed predominantly via carrier–carrier scattering, as evidenced by the observed dependence of the thermalization time on pump fluences. The fluence dependent time constants also suggest that the subsequent cooling for electrons is probably dominated by acoustic phonons, whereas for holes it is mostly controlled by LO phonons. An extremely fast red- and blue-shift crossover followed by a slow blue-shift of exciton resonance was observed in the temporal evolution of exciton resonances by resonant exciton A excitation. The rapid red-shift could be due to the strong screening of the Coulomb interaction between quasi-free charge carriers in electron–hole plasma. The subsequent slow blue-shift is the net result of the competition among many-body effects in the hot-exciton cooling process. Our findings elucidate the carrier-selective ultrafast dynamics and their many-body effects, underpinning new possibilities for developing optoelectronic devices based on transport properties of a single type of carrier.
1463-9076
7135-7144
Chen, Junjie
1e1483fb-db6b-463f-a7cc-43e9bab3b402
Guo, Sen
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Lin, Dabin
688d380f-7bc0-4baf-aaa4-f99bf7d5dde6
Nie, Zhaogang
19d1332d-7678-4ab4-8cb6-850205e69eea
Huang, Kevin Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hu, Kaige
417bb176-ce22-4aaf-847d-5b2d974915f0
Ma, Lin
2c909a72-bcf4-4053-a94a-180f4fb58a36
Zhang, Fangteng
a93b78cf-5d7f-4eb5-b9f3-7311e9162d71
Zhao, Weiren
e06de148-de64-490f-a887-be469f2d93bf
Zhang, Wenchun
c6fadc9b-41ad-436b-871d-66c17bbf9256
Chen, Junjie
1e1483fb-db6b-463f-a7cc-43e9bab3b402
Guo, Sen
f7c2f433-62f5-4d4f-9fe5-d4057a9ce187
Lin, Dabin
688d380f-7bc0-4baf-aaa4-f99bf7d5dde6
Nie, Zhaogang
19d1332d-7678-4ab4-8cb6-850205e69eea
Huang, Kevin Chung-Che
825f7447-6d02-48f6-b95a-fa33da71f106
Hu, Kaige
417bb176-ce22-4aaf-847d-5b2d974915f0
Ma, Lin
2c909a72-bcf4-4053-a94a-180f4fb58a36
Zhang, Fangteng
a93b78cf-5d7f-4eb5-b9f3-7311e9162d71
Zhao, Weiren
e06de148-de64-490f-a887-be469f2d93bf
Zhang, Wenchun
c6fadc9b-41ad-436b-871d-66c17bbf9256

Chen, Junjie, Guo, Sen, Lin, Dabin, Nie, Zhaogang, Huang, Kevin Chung-Che, Hu, Kaige, Ma, Lin, Zhang, Fangteng, Zhao, Weiren and Zhang, Wenchun (2021) Ultrafast nonequilibrium dynamic process of separate electrons and holes during exciton formation in few-layer tungsten disulfide. Physical Chemistry Chemical Physics, 23 (12), 7135-7144. (doi:10.1039/D1CP00250C).

Record type: Article

Abstract

Femtosecond transient absorption spectroscopy has been employed to unravel separate initial nonequilibrium dynamic processes of photo-injected electrons and holes during the formation process of the lowest excitons at the K-valley in few-layer tungsten disulfide. Charge carrier thermalization and cooling, as well as concomitant many-body effects on the exciton resonances, are distinguished. The thermalization of holes is observed to be faster than that of electrons. Both of them proceed predominantly via carrier–carrier scattering, as evidenced by the observed dependence of the thermalization time on pump fluences. The fluence dependent time constants also suggest that the subsequent cooling for electrons is probably dominated by acoustic phonons, whereas for holes it is mostly controlled by LO phonons. An extremely fast red- and blue-shift crossover followed by a slow blue-shift of exciton resonance was observed in the temporal evolution of exciton resonances by resonant exciton A excitation. The rapid red-shift could be due to the strong screening of the Coulomb interaction between quasi-free charge carriers in electron–hole plasma. The subsequent slow blue-shift is the net result of the competition among many-body effects in the hot-exciton cooling process. Our findings elucidate the carrier-selective ultrafast dynamics and their many-body effects, underpinning new possibilities for developing optoelectronic devices based on transport properties of a single type of carrier.

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Ultrafast nonequilibrium dynamic process of separate electron and hole during exciton formation in few-layer tungsten disulfide_accepted manuscript
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Accepted/In Press date: 4 March 2021
e-pub ahead of print date: 4 March 2021
Published date: 4 March 2021
Additional Information: Funding Information: This work is financially supported by the National Natural Science Foundation of China (Grant No. 11774071 and 11704079), the Science and Technology Program of Guangzhou (Grant No. 201904010104 and 201804010451), the National Natural Science Foundation of Guangdong (Grant No. 501200050 and 2021A1515012049), the State Key Laboratory of Luminescence and Applications (Grant No. SKLA-2019-08), the Future Photonics Manufacturing Hub (EPSRC EP/N00762X/ 1) and the Chalcogenide Photonic Technologies (EPSRC EP/ M008487/1) at University of Southampton, United Kingdom. Publisher Copyright: © the Owner Societies 2021.

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Local EPrints ID: 447981
URI: http://eprints.soton.ac.uk/id/eprint/447981
ISSN: 1463-9076
PURE UUID: 60ecd3c1-a568-42f3-a56f-a2f812677ac2
ORCID for Kevin Chung-Che Huang: ORCID iD orcid.org/0000-0003-3471-2463

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Date deposited: 29 Mar 2021 16:37
Last modified: 17 Mar 2024 06:27

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Contributors

Author: Junjie Chen
Author: Sen Guo
Author: Dabin Lin
Author: Zhaogang Nie
Author: Kaige Hu
Author: Lin Ma
Author: Fangteng Zhang
Author: Weiren Zhao
Author: Wenchun Zhang

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