Focused-ion-beam implantation of luminescence centers in Gallium Nitride in optical telecom frequency band
Focused-ion-beam implantation of luminescence centers in Gallium Nitride in optical telecom frequency band
We report on-demand and site-specific creation of near-infrared color centers in GaN films by Ga+ implantation where the luminescence is attributed to optical transitions of neutral gallium atoms originating from implanted Ga+ ions.
So, Jin-Kyu
52a66da7-6776-46c0-b3f1-69d1160869db
Soci, Cesare
6c86324e-2968-4e90-9436-4a92a4b26cec
Gao, Weibo
215e014c-7a9c-429a-8b41-42fe2513171b
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6
21 June 2021
So, Jin-Kyu
52a66da7-6776-46c0-b3f1-69d1160869db
Soci, Cesare
6c86324e-2968-4e90-9436-4a92a4b26cec
Gao, Weibo
215e014c-7a9c-429a-8b41-42fe2513171b
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6
So, Jin-Kyu, Soci, Cesare, Gao, Weibo and Zheludev, Nikolai
(2021)
Focused-ion-beam implantation of luminescence centers in Gallium Nitride in optical telecom frequency band.
CLEO/Europe-EQEC 2021 Virtual Meeting, Europe, Virtual.
21 - 25 Jun 2021.
(doi:10.1109/CLEO/Europe-EQEC52157.2021.9542578).
Record type:
Conference or Workshop Item
(Paper)
Abstract
We report on-demand and site-specific creation of near-infrared color centers in GaN films by Ga+ implantation where the luminescence is attributed to optical transitions of neutral gallium atoms originating from implanted Ga+ ions.
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Published date: 21 June 2021
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© 2021 IEEE.
Venue - Dates:
CLEO/Europe-EQEC 2021 Virtual Meeting, Europe, Virtual, 2021-06-21 - 2021-06-25
Identifiers
Local EPrints ID: 448260
URI: http://eprints.soton.ac.uk/id/eprint/448260
PURE UUID: e9503cc2-de71-4ee2-92fe-769b7b8d0dfb
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Date deposited: 16 Apr 2021 16:33
Last modified: 17 Mar 2024 02:39
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Contributors
Author:
Jin-Kyu So
Author:
Cesare Soci
Author:
Weibo Gao
Author:
Nikolai Zheludev
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