Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation
Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation
We present what is to our knowledge the first experimental study of light-induced reflectivity changes at an α-Ga/silica interface irradiated by femtosecond and picosecond laser pulses. After exposure, the reflectivity can increase from R ~ 0.55 , which is typical for α-Ga , to R ~ 0.8 , which is close to that of liquid Ga. The initial step in the reflectivity change of 2-4 ps is resolved with 150 fs laser pulses. The light-induced reflectivity change relaxes during 100 ns - 10 µs , depending strongly on the background temperature of the Ga mirror and the laser fluence.
441-443
Rode, A.V.
30b9f186-abb4-4054-a70d-9377cee7e099
Samoc, M.
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Luther-Davies, B.
6a4d2ada-6d85-46eb-a8f6-eae90a4399c8
Gamaly, E.G.
76a30cf3-d835-4c9c-a8cb-f5f253af513d
MacDonald, Kevin
76c84116-aad1-4973-b917-7ca63935dba5
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6
April 2001
Rode, A.V.
30b9f186-abb4-4054-a70d-9377cee7e099
Samoc, M.
ab094b43-827a-4392-a4ea-761f94bdc4f6
Luther-Davies, B.
6a4d2ada-6d85-46eb-a8f6-eae90a4399c8
Gamaly, E.G.
76a30cf3-d835-4c9c-a8cb-f5f253af513d
MacDonald, Kevin
76c84116-aad1-4973-b917-7ca63935dba5
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6
Rode, A.V., Samoc, M., Luther-Davies, B., Gamaly, E.G., MacDonald, Kevin and Zheludev, Nikolai
(2001)
Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation.
Optics Letters, 26 (7), .
(doi:10.1364/OL.26.000441).
Abstract
We present what is to our knowledge the first experimental study of light-induced reflectivity changes at an α-Ga/silica interface irradiated by femtosecond and picosecond laser pulses. After exposure, the reflectivity can increase from R ~ 0.55 , which is typical for α-Ga , to R ~ 0.8 , which is close to that of liquid Ga. The initial step in the reflectivity change of 2-4 ps is resolved with 150 fs laser pulses. The light-induced reflectivity change relaxes during 100 ns - 10 µs , depending strongly on the background temperature of the Ga mirror and the laser fluence.
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Published date: April 2001
Additional Information:
Errata published: Optics Letters, 26, (11), 852. Throughout this paper, all references to 'Si' should be read as 'silica'.
Identifiers
Local EPrints ID: 448339
URI: http://eprints.soton.ac.uk/id/eprint/448339
ISSN: 0146-9592
PURE UUID: bb7157e4-a8f1-49d5-a223-7847e04f918e
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Date deposited: 20 Apr 2021 16:34
Last modified: 17 Mar 2024 02:50
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Contributors
Author:
A.V. Rode
Author:
M. Samoc
Author:
B. Luther-Davies
Author:
E.G. Gamaly
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