The University of Southampton
University of Southampton Institutional Repository

Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation

Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation
Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation
We present what is to our knowledge the first experimental study of light-induced reflectivity changes at an α-Ga/silica interface irradiated by femtosecond and picosecond laser pulses. After exposure, the reflectivity can increase from R ~ 0.55 , which is typical for α-Ga , to R ~ 0.8 , which is close to that of liquid Ga. The initial step in the reflectivity change of 2-4 ps is resolved with 150 fs laser pulses. The light-induced reflectivity change relaxes during 100 ns - 10 µs , depending strongly on the background temperature of the Ga mirror and the laser fluence.
0146-9592
441-443
Rode, A.V.
30b9f186-abb4-4054-a70d-9377cee7e099
Samoc, M.
ab094b43-827a-4392-a4ea-761f94bdc4f6
Luther-Davies, B.
6a4d2ada-6d85-46eb-a8f6-eae90a4399c8
Gamaly, E.G.
76a30cf3-d835-4c9c-a8cb-f5f253af513d
MacDonald, Kevin
76c84116-aad1-4973-b917-7ca63935dba5
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6
Rode, A.V.
30b9f186-abb4-4054-a70d-9377cee7e099
Samoc, M.
ab094b43-827a-4392-a4ea-761f94bdc4f6
Luther-Davies, B.
6a4d2ada-6d85-46eb-a8f6-eae90a4399c8
Gamaly, E.G.
76a30cf3-d835-4c9c-a8cb-f5f253af513d
MacDonald, Kevin
76c84116-aad1-4973-b917-7ca63935dba5
Zheludev, Nikolai
32fb6af7-97e4-4d11-bca6-805745e40cc6

Rode, A.V., Samoc, M., Luther-Davies, B., Gamaly, E.G., MacDonald, Kevin and Zheludev, Nikolai (2001) Dynamics of light-induced reflectivity switching in gallium films deposited on silica by pulsed laser ablation. Optics Letters, 26 (7), 441-443. (doi:10.1364/OL.26.000441).

Record type: Article

Abstract

We present what is to our knowledge the first experimental study of light-induced reflectivity changes at an α-Ga/silica interface irradiated by femtosecond and picosecond laser pulses. After exposure, the reflectivity can increase from R ~ 0.55 , which is typical for α-Ga , to R ~ 0.8 , which is close to that of liquid Ga. The initial step in the reflectivity change of 2-4 ps is resolved with 150 fs laser pulses. The light-induced reflectivity change relaxes during 100 ns - 10 µs , depending strongly on the background temperature of the Ga mirror and the laser fluence.

Full text not available from this repository.

More information

Published date: April 2001
Additional Information: Errata published: Optics Letters, 26, (11), 852. Throughout this paper, all references to 'Si' should be read as 'silica'.

Identifiers

Local EPrints ID: 448339
URI: http://eprints.soton.ac.uk/id/eprint/448339
ISSN: 0146-9592
PURE UUID: bb7157e4-a8f1-49d5-a223-7847e04f918e
ORCID for Kevin MacDonald: ORCID iD orcid.org/0000-0002-3877-2976
ORCID for Nikolai Zheludev: ORCID iD orcid.org/0000-0002-1013-6636

Catalogue record

Date deposited: 20 Apr 2021 16:34
Last modified: 21 Apr 2021 01:38

Export record

Altmetrics

Contributors

Author: A.V. Rode
Author: M. Samoc
Author: B. Luther-Davies
Author: E.G. Gamaly
Author: Kevin MacDonald ORCID iD

University divisions

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×