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High bandwidth capacitance efficient Silicon MOS modulator

High bandwidth capacitance efficient Silicon MOS modulator
High bandwidth capacitance efficient Silicon MOS modulator

This article analysed and optimised horizontal Silicon insulator Silicon capacitor (H-SISCAP) phase shifter structures with insulator thickness tox up to 40 nm. The phase shifter has an effective capacitance (Ceff) around 0.5 fF/μm and a phase change efficiency 1.8 V·cm, of which the balance between capacitance and phase efficiency is comparable with silicon rib waveguide based depletion type phase shifters. Silicon Mach-Zehnder interferometer (MZI) modulators with 200 μm long H-SISCAP phase shifters optimised for TM polarised light have been fabricated and demonstrated with a 3 dB EO bandwidth above 35 GHz and intrinsic H-SISCAP RC bandwidth around 150 GHz. The modulator displays open eye-diagrams for data rates up to 60 Gbit/s without detection equalization and 72 Gbit/s with 2 taps equalization in NRZ-OOK operation. The demonstrated H-SISCAP phase shifter paves the way to build high bandwidth segmented, travelling wave and compact ring resonators modulators for applications of optical transmitters, microwave generations, and LIDAR applications, etc.

Electrooptic modulators, MOS, Silicon photonics
0733-8724
201-207
Zhang, Weiwei
1a783f97-c5ac-49e9-a5a0-49b8b2efab36
Zhang, Weiwei
1a783f97-c5ac-49e9-a5a0-49b8b2efab36

Zhang, Weiwei (2021) High bandwidth capacitance efficient Silicon MOS modulator. Journal of Lightwave Technology, 39 (1), 201-207, [9205993]. (doi:10.1109/JLT.2020.3026945).

Record type: Article

Abstract

This article analysed and optimised horizontal Silicon insulator Silicon capacitor (H-SISCAP) phase shifter structures with insulator thickness tox up to 40 nm. The phase shifter has an effective capacitance (Ceff) around 0.5 fF/μm and a phase change efficiency 1.8 V·cm, of which the balance between capacitance and phase efficiency is comparable with silicon rib waveguide based depletion type phase shifters. Silicon Mach-Zehnder interferometer (MZI) modulators with 200 μm long H-SISCAP phase shifters optimised for TM polarised light have been fabricated and demonstrated with a 3 dB EO bandwidth above 35 GHz and intrinsic H-SISCAP RC bandwidth around 150 GHz. The modulator displays open eye-diagrams for data rates up to 60 Gbit/s without detection equalization and 72 Gbit/s with 2 taps equalization in NRZ-OOK operation. The demonstrated H-SISCAP phase shifter paves the way to build high bandwidth segmented, travelling wave and compact ring resonators modulators for applications of optical transmitters, microwave generations, and LIDAR applications, etc.

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More information

Accepted/In Press date: 17 September 2020
Published date: 1 January 2021
Keywords: Electrooptic modulators, MOS, Silicon photonics

Identifiers

Local EPrints ID: 448418
URI: http://eprints.soton.ac.uk/id/eprint/448418
ISSN: 0733-8724
PURE UUID: 31044d70-fcc9-4c73-9639-f90520523d8d

Catalogue record

Date deposited: 22 Apr 2021 16:30
Last modified: 27 Apr 2022 04:43

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