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Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure

Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure
Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure
An excessive unintentional out-diffuses In atoms into the switching layer is a potential threat to the switching stability of memristor devices having indium tin oxide (ITO) as the electrode. We suggest that the physical factor (bombardment of Ar ions and bombardment induced localized heat during ZnO deposition) and chemical factor (bonding dissociation energy, point defects, and bond length of atoms) responsible for promoting the out-diffusion. The In atom acts as dopant in the ZnO lattice that degenerates the ZnO insulative behavior. Furthermore, the In ions take part in the conduction mechanism where they may compete with other mobile species to form and rupture the filament, and hence, deteriorate the switching performance. We propose a facile UV/O3 (UVO) treatment to mitigate such damaging effects.
The device fabricated on the UVO-treated ITO substrate exhibits significant switching parameter improvement than that of the device manufactured on untreated ITO. This work delivers an insight into the damaging effect of out-diffusion and auto-doping processes on the reliability of memristor devices.
memristor, resistive memory, surface treatment, ultraviolet/ozone, transparent electronics
0003-6951
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Simanjuntak, Firman
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5

Simanjuntak, Firman (2021) Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnO/ITO heterostructure. Applied Physics Letters. (In Press)

Record type: Article

Abstract

An excessive unintentional out-diffuses In atoms into the switching layer is a potential threat to the switching stability of memristor devices having indium tin oxide (ITO) as the electrode. We suggest that the physical factor (bombardment of Ar ions and bombardment induced localized heat during ZnO deposition) and chemical factor (bonding dissociation energy, point defects, and bond length of atoms) responsible for promoting the out-diffusion. The In atom acts as dopant in the ZnO lattice that degenerates the ZnO insulative behavior. Furthermore, the In ions take part in the conduction mechanism where they may compete with other mobile species to form and rupture the filament, and hence, deteriorate the switching performance. We propose a facile UV/O3 (UVO) treatment to mitigate such damaging effects.
The device fabricated on the UVO-treated ITO substrate exhibits significant switching parameter improvement than that of the device manufactured on untreated ITO. This work delivers an insight into the damaging effect of out-diffusion and auto-doping processes on the reliability of memristor devices.

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Negative effect of cations out-diffusion and auto-doping on switching mechanisms of transparent memristor devices employing ZnOITO heterostructure - Accepted Manuscript
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Accepted/In Press date: 11 April 2021
Keywords: memristor, resistive memory, surface treatment, ultraviolet/ozone, transparent electronics

Identifiers

Local EPrints ID: 448721
URI: http://eprints.soton.ac.uk/id/eprint/448721
ISSN: 0003-6951
PURE UUID: ca31bebe-e147-4be6-a05b-aadd8ae5b3fb

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Date deposited: 30 Apr 2021 16:34
Last modified: 23 Aug 2021 16:56

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Contributors

Author: Firman Simanjuntak

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