Fast, highly flexible, and transparent TaOx-based environmentally robust memristors for wearable and aerospace applications
Fast, highly flexible, and transparent TaOx-based environmentally robust memristors for wearable and aerospace applications
Memristor devices that can operate at high speed with high density and nonvolatile capabilities have great potential for the development of high data storage and robust wearable devices. However, in real-time, the performance of memristors is challenged by their instability toward harsh working conditions such as high temperature, extreme humidity, photo irradiation, and mechanical bending. Herein, we introduce a TaOx/AlN-based flexible and transparent memristor device having stable endurance under extreme 2 mm bending (for more than 107 cycles) with an ON/OFF ratio of more than 2 orders of magnitude at 25 ns rapid switching. This device exhibits excellent flexibility under extreme bending conditions (bending radius of 2 mm) even with intense ultraviolet (UV) radiation. A thin AlN insertion layer having low dielectric and high thermal conductivity plays a crucial role in improving the switching stability and device flexibility. In particular, the devices exhibit excellent minimum switching fluctuations under UV irradiation, >106 s nonvolatility retention at high temperature (135 °C), various gas ambient, and damp heat test (humidity 95.5%, 83 °C) because of the indium metal drift during the switching process and high bonding energy of Ta–O. Most importantly, direct observation of indium metal strongly anchored in the TaOx switching layer during the switching process is reported for the first time via transmission electron microscopy, which provides clear insights into the switching phenomenon. Furthermore, the results of electrical and material analyses explain that our facile device design has excellent potential for wearable and aerospace applications.
3131-3140
Rajasekaran, Sailesh
2271dc94-da31-4e7d-a1b3-20594a710c82
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panda, Debashis
e94eb431-589e-4a0a-82b8-0647442c0c5f
Chandrasekaran, Sridhar
8aece1e1-b034-4f63-b0b1-f9b1e4490765
Aluguri, Rakesh
64b91596-f449-47b8-b1e3-86ae7b5003ce
Saleem, Aftab
5df80d3b-f1c8-4e90-904f-27d5facec891
Tseng, Tseung-Yuen
b25672b0-7cd2-4c52-bb91-14d56d2777a9
27 October 2020
Rajasekaran, Sailesh
2271dc94-da31-4e7d-a1b3-20594a710c82
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panda, Debashis
e94eb431-589e-4a0a-82b8-0647442c0c5f
Chandrasekaran, Sridhar
8aece1e1-b034-4f63-b0b1-f9b1e4490765
Aluguri, Rakesh
64b91596-f449-47b8-b1e3-86ae7b5003ce
Saleem, Aftab
5df80d3b-f1c8-4e90-904f-27d5facec891
Tseng, Tseung-Yuen
b25672b0-7cd2-4c52-bb91-14d56d2777a9
Rajasekaran, Sailesh, Simanjuntak, Firman Mangasa, Panda, Debashis, Chandrasekaran, Sridhar, Aluguri, Rakesh, Saleem, Aftab and Tseng, Tseung-Yuen
(2020)
Fast, highly flexible, and transparent TaOx-based environmentally robust memristors for wearable and aerospace applications.
ACS Applied Electronic Materials, .
(doi:10.1021/acsaelm.0c00441).
Abstract
Memristor devices that can operate at high speed with high density and nonvolatile capabilities have great potential for the development of high data storage and robust wearable devices. However, in real-time, the performance of memristors is challenged by their instability toward harsh working conditions such as high temperature, extreme humidity, photo irradiation, and mechanical bending. Herein, we introduce a TaOx/AlN-based flexible and transparent memristor device having stable endurance under extreme 2 mm bending (for more than 107 cycles) with an ON/OFF ratio of more than 2 orders of magnitude at 25 ns rapid switching. This device exhibits excellent flexibility under extreme bending conditions (bending radius of 2 mm) even with intense ultraviolet (UV) radiation. A thin AlN insertion layer having low dielectric and high thermal conductivity plays a crucial role in improving the switching stability and device flexibility. In particular, the devices exhibit excellent minimum switching fluctuations under UV irradiation, >106 s nonvolatility retention at high temperature (135 °C), various gas ambient, and damp heat test (humidity 95.5%, 83 °C) because of the indium metal drift during the switching process and high bonding energy of Ta–O. Most importantly, direct observation of indium metal strongly anchored in the TaOx switching layer during the switching process is reported for the first time via transmission electron microscopy, which provides clear insights into the switching phenomenon. Furthermore, the results of electrical and material analyses explain that our facile device design has excellent potential for wearable and aerospace applications.
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Published date: 27 October 2020
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Local EPrints ID: 448735
URI: http://eprints.soton.ac.uk/id/eprint/448735
PURE UUID: 3934aa6c-dabd-46c3-9772-9bbbbaab5a4a
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Date deposited: 04 May 2021 16:38
Last modified: 17 Mar 2024 03:59
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Author:
Sailesh Rajasekaran
Author:
Firman Mangasa Simanjuntak
Author:
Debashis Panda
Author:
Sridhar Chandrasekaran
Author:
Rakesh Aluguri
Author:
Aftab Saleem
Author:
Tseung-Yuen Tseng
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