The University of Southampton
University of Southampton Institutional Repository
Warning ePrints Soton is experiencing an issue with some file downloads not being available. We are working hard to fix this. Please bear with us.

Fast, highly flexible, and transparent TaOx-based environmentally robust memristors for wearable and aerospace applications

Fast, highly flexible, and transparent TaOx-based environmentally robust memristors for wearable and aerospace applications
Fast, highly flexible, and transparent TaOx-based environmentally robust memristors for wearable and aerospace applications
Memristor devices that can operate at high speed with high density and nonvolatile capabilities have great potential for the development of high data storage and robust wearable devices. However, in real-time, the performance of memristors is challenged by their instability toward harsh working conditions such as high temperature, extreme humidity, photo irradiation, and mechanical bending. Herein, we introduce a TaOx/AlN-based flexible and transparent memristor device having stable endurance under extreme 2 mm bending (for more than 107 cycles) with an ON/OFF ratio of more than 2 orders of magnitude at 25 ns rapid switching. This device exhibits excellent flexibility under extreme bending conditions (bending radius of 2 mm) even with intense ultraviolet (UV) radiation. A thin AlN insertion layer having low dielectric and high thermal conductivity plays a crucial role in improving the switching stability and device flexibility. In particular, the devices exhibit excellent minimum switching fluctuations under UV irradiation, >106 s nonvolatility retention at high temperature (135 °C), various gas ambient, and damp heat test (humidity 95.5%, 83 °C) because of the indium metal drift during the switching process and high bonding energy of Ta–O. Most importantly, direct observation of indium metal strongly anchored in the TaOx switching layer during the switching process is reported for the first time via transmission electron microscopy, which provides clear insights into the switching phenomenon. Furthermore, the results of electrical and material analyses explain that our facile device design has excellent potential for wearable and aerospace applications.
3131-3140
Rajasekaran, Sailesh
2271dc94-da31-4e7d-a1b3-20594a710c82
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panda, Debashis
0de17b04-a876-49e8-91d7-1eb50a34cf43
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Aluguri, Rakesh
64b91596-f449-47b8-b1e3-86ae7b5003ce
Saleem, Aftab
5df80d3b-f1c8-4e90-904f-27d5facec891
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Rajasekaran, Sailesh
2271dc94-da31-4e7d-a1b3-20594a710c82
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panda, Debashis
0de17b04-a876-49e8-91d7-1eb50a34cf43
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Aluguri, Rakesh
64b91596-f449-47b8-b1e3-86ae7b5003ce
Saleem, Aftab
5df80d3b-f1c8-4e90-904f-27d5facec891
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Rajasekaran, Sailesh, Simanjuntak, Firman Mangasa, Panda, Debashis, Chandrasekaran, Sridhar, Aluguri, Rakesh, Saleem, Aftab and Tseng, Tseung-Yuen (2020) Fast, highly flexible, and transparent TaOx-based environmentally robust memristors for wearable and aerospace applications. ACS Applied Electronic Materials, 3131-3140. (doi:10.1021/acsaelm.0c00441).

Record type: Article

Abstract

Memristor devices that can operate at high speed with high density and nonvolatile capabilities have great potential for the development of high data storage and robust wearable devices. However, in real-time, the performance of memristors is challenged by their instability toward harsh working conditions such as high temperature, extreme humidity, photo irradiation, and mechanical bending. Herein, we introduce a TaOx/AlN-based flexible and transparent memristor device having stable endurance under extreme 2 mm bending (for more than 107 cycles) with an ON/OFF ratio of more than 2 orders of magnitude at 25 ns rapid switching. This device exhibits excellent flexibility under extreme bending conditions (bending radius of 2 mm) even with intense ultraviolet (UV) radiation. A thin AlN insertion layer having low dielectric and high thermal conductivity plays a crucial role in improving the switching stability and device flexibility. In particular, the devices exhibit excellent minimum switching fluctuations under UV irradiation, >106 s nonvolatility retention at high temperature (135 °C), various gas ambient, and damp heat test (humidity 95.5%, 83 °C) because of the indium metal drift during the switching process and high bonding energy of Ta–O. Most importantly, direct observation of indium metal strongly anchored in the TaOx switching layer during the switching process is reported for the first time via transmission electron microscopy, which provides clear insights into the switching phenomenon. Furthermore, the results of electrical and material analyses explain that our facile device design has excellent potential for wearable and aerospace applications.

This record has no associated files available for download.

More information

Published date: 27 October 2020

Identifiers

Local EPrints ID: 448735
URI: http://eprints.soton.ac.uk/id/eprint/448735
PURE UUID: 3934aa6c-dabd-46c3-9772-9bbbbaab5a4a

Catalogue record

Date deposited: 04 May 2021 16:38
Last modified: 26 Nov 2021 00:07

Export record

Altmetrics

Contributors

Author: Sailesh Rajasekaran
Author: Firman Mangasa Simanjuntak
Author: Debashis Panda
Author: Sridhar Chandrasekaran
Author: Rakesh Aluguri
Author: Aftab Saleem
Author: Tseung-Yuen Tseng

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×