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Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices

Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices
Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices
Oxidation of TiN is a diffusion-limited process due to the high stability of the TiN metallic state at the TiN/TiO2 junction. Hence, the TiN/TiO2/TiN device being the inability to form a suitable interfacial layer results in the exhibition of abrupt current (conductance) rise and fall during the set (potentiation) and reset (depression) processes, respectively. Interfacial engineering by depositing Ti film served as the oxygen gettering material on top of the TiO2 layer induces a spontaneous reaction to form a TiOx interfacial layer (due to the low Gibbs free energy of suboxide formation). Such an interface layer acts as an oxygen reservoir that promotes gradual oxidation and reduction during the set and reset processes. Consequently, an excellent analog behavior having a 2-bit per cell and robust epoch training can be achieved. However, a thick interfacial layer may degrade the switching behavior of the device due to the high internal resistance. This work suggests that interfacial engineering could be considered in designing high-performance analog memristor devices.
0003-6951
Chang, Lung-Yu
f319b36a-88d3-4da0-94da-205c5f52c19b
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Hsu, Chun-Ling
41f166b8-e782-4434-98dc-c8f368a66ece
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Chang, Lung-Yu
f319b36a-88d3-4da0-94da-205c5f52c19b
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Hsu, Chun-Ling
41f166b8-e782-4434-98dc-c8f368a66ece
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Chang, Lung-Yu, Simanjuntak, Firman Mangasa, Hsu, Chun-Ling, Chandrasekaran, Sridhar and Tseng, Tseung-Yuen (2020) Suboxide interface induced digital-to-analog switching transformation in all Ti-based memristor devices. Applied Physics Letters, 117. (doi:10.1063/5.0014829).

Record type: Article

Abstract

Oxidation of TiN is a diffusion-limited process due to the high stability of the TiN metallic state at the TiN/TiO2 junction. Hence, the TiN/TiO2/TiN device being the inability to form a suitable interfacial layer results in the exhibition of abrupt current (conductance) rise and fall during the set (potentiation) and reset (depression) processes, respectively. Interfacial engineering by depositing Ti film served as the oxygen gettering material on top of the TiO2 layer induces a spontaneous reaction to form a TiOx interfacial layer (due to the low Gibbs free energy of suboxide formation). Such an interface layer acts as an oxygen reservoir that promotes gradual oxidation and reduction during the set and reset processes. Consequently, an excellent analog behavior having a 2-bit per cell and robust epoch training can be achieved. However, a thick interfacial layer may degrade the switching behavior of the device due to the high internal resistance. This work suggests that interfacial engineering could be considered in designing high-performance analog memristor devices.

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Published date: 17 August 2020

Identifiers

Local EPrints ID: 448736
URI: http://eprints.soton.ac.uk/id/eprint/448736
ISSN: 0003-6951
PURE UUID: 71d288bf-9ea8-4392-a245-67b487b1d638

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Date deposited: 04 May 2021 16:38
Last modified: 25 Nov 2021 21:42

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Contributors

Author: Lung-Yu Chang
Author: Firman Mangasa Simanjuntak
Author: Chun-Ling Hsu
Author: Sridhar Chandrasekaran
Author: Tseung-Yuen Tseng

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