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Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memory

Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memory
Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memory
The effect of the TiW barrier layer on the switching properties of Ga-doped ZnO (GZO) nanorods based on Electrochemical Metallization Memory is investigated. Vertically wellaligned and uniform GZO nanorods having a diameter of approximately 35 nm are hydrothermally grown on a seeding layer of ZnO deposited on indium tin oxide (ITO) coated glass substrate, to fabricate Cu/TiW/nanorods/ITO/Glass devices. The remarkable enhancement in the memory window (on/off ratio) is achieved in the 5 nm TiW barrier layer embedded device. This device exhibits endurance of more than 103 cycles and a large memory window of ∼103. The conduction mechanism at different current regions is studied, and it is found that Schottky emission is dominated in the low field region. The TiW barrier layer helps to retain the Cu ions and control the Cu ions diffusion, hence control the filament growth into the resistive layer, confirmed from the X-ray photoelectron spectroscopy (XPS) analysis. This device is suitable for the future low power non-volatile memory devices.
1941-0085
764-768
Panda, Debashis
0de17b04-a876-49e8-91d7-1eb50a34cf43
Simanjuntak, Firman M.
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Pattanayak, Bhaskar
9dd68f79-9367-4ebd-9773-e963193c48ea
Singh, Pragya
8fb95fa7-5174-48d9-b5ed-29c5f2574c5c
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Panda, Debashis
0de17b04-a876-49e8-91d7-1eb50a34cf43
Simanjuntak, Firman M.
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Pattanayak, Bhaskar
9dd68f79-9367-4ebd-9773-e963193c48ea
Singh, Pragya
8fb95fa7-5174-48d9-b5ed-29c5f2574c5c
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Panda, Debashis, Simanjuntak, Firman M., Chandrasekaran, Sridhar, Pattanayak, Bhaskar, Singh, Pragya and Tseng, Tseung-Yuen (2020) Barrier layer induced switching stability in Ga:ZnO nanorods based electrochemical metallization memory. IEEE Transactions on Nanotechnology, 764-768. (doi:10.1109/TNANO.2020.3029588).

Record type: Article

Abstract

The effect of the TiW barrier layer on the switching properties of Ga-doped ZnO (GZO) nanorods based on Electrochemical Metallization Memory is investigated. Vertically wellaligned and uniform GZO nanorods having a diameter of approximately 35 nm are hydrothermally grown on a seeding layer of ZnO deposited on indium tin oxide (ITO) coated glass substrate, to fabricate Cu/TiW/nanorods/ITO/Glass devices. The remarkable enhancement in the memory window (on/off ratio) is achieved in the 5 nm TiW barrier layer embedded device. This device exhibits endurance of more than 103 cycles and a large memory window of ∼103. The conduction mechanism at different current regions is studied, and it is found that Schottky emission is dominated in the low field region. The TiW barrier layer helps to retain the Cu ions and control the Cu ions diffusion, hence control the filament growth into the resistive layer, confirmed from the X-ray photoelectron spectroscopy (XPS) analysis. This device is suitable for the future low power non-volatile memory devices.

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Published date: September 2020

Identifiers

Local EPrints ID: 448742
URI: http://eprints.soton.ac.uk/id/eprint/448742
ISSN: 1941-0085
PURE UUID: e0d01856-a765-412f-b55a-31819ca9af44

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Date deposited: 04 May 2021 16:47
Last modified: 14 Sep 2021 20:43

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Contributors

Author: Debashis Panda
Author: Firman M. Simanjuntak
Author: Sridhar Chandrasekaran
Author: Bhaskar Pattanayak
Author: Pragya Singh
Author: Tseung-Yuen Tseng

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