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Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode

Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode
The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than 104 cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration.
0022-2461
6961-6969
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panda, Debashis
0de17b04-a876-49e8-91d7-1eb50a34cf43
Tsai, Tsung-Ling
e7a4636d-8743-41a5-89e6-ba742f94dbb4
Lin, Chun-An
128c2baf-6e92-41bb-8697-4502ae108adf
Wei, Kung-Hwa
3b02361f-28aa-4a6a-948f-da9cc1b67eef
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panda, Debashis
0de17b04-a876-49e8-91d7-1eb50a34cf43
Tsai, Tsung-Ling
e7a4636d-8743-41a5-89e6-ba742f94dbb4
Lin, Chun-An
128c2baf-6e92-41bb-8697-4502ae108adf
Wei, Kung-Hwa
3b02361f-28aa-4a6a-948f-da9cc1b67eef
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Simanjuntak, Firman Mangasa, Panda, Debashis, Tsai, Tsung-Ling, Lin, Chun-An, Wei, Kung-Hwa and Tseng, Tseung-Yuen (2015) Enhancing the memory window of AZO/ZnO/ITO transparent resistive switching devices by modulating the oxygen vacancy concentration of the top electrode. Journal of Materials Science, 6961-6969. (doi:10.1007/s10853-015-9247-y).

Record type: Article

Abstract

The effect of a defect concentration-modified top electrode on the bipolar resistance switching of transparent Al-doped ZnO/ZnO/ITO [AZO(TE)/ZnO/ITO(BE)] devices was investigated. Different oxygen vacancy concentrations in the top electrode, Al-doped ZnO, can be simply controlled by modulating the sputtering working pressure condition from 1.2 to 12 mTorr. The oxygen vacancy concentration between AZO and ZnO may trigger oxygen diffusion at the interface and affect the switching characteristic. High oxygen release from a ZnO resistive layer caused by excessive oxygen vacancy concentration at the top electrode is responsible for reducing the memory window as a result of reduced oxygen available to rupture the filament. Top electrode based on lower oxygen vacancy concentration has a higher memory window and an asymmetric resistive switching characteristic. However, all set of devices have excellent endurance of more than 104 cycles. This study showed that an Al-doped ZnO top electrode helps not only to achieve a transparent device but also to enhance memory properties by providing a suitable oxygen vacancy concentration.

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Published date: 14 July 2015

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Local EPrints ID: 448747
URI: http://eprints.soton.ac.uk/id/eprint/448747
ISSN: 0022-2461
PURE UUID: 0baac5b6-da04-4175-817e-fe211b0e5e2b

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Date deposited: 05 May 2021 16:30
Last modified: 03 Sep 2021 16:30

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Contributors

Author: Firman Mangasa Simanjuntak
Author: Debashis Panda
Author: Tsung-Ling Tsai
Author: Chun-An Lin
Author: Kung-Hwa Wei
Author: Tseung-Yuen Tseng

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