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Film-nanostructure-controlled inerasable-to-erasable switching transition in ZnO-based transparent memristor devices: sputtering-pressure dependency

Film-nanostructure-controlled inerasable-to-erasable switching transition in ZnO-based transparent memristor devices: sputtering-pressure dependency
Film-nanostructure-controlled inerasable-to-erasable switching transition in ZnO-based transparent memristor devices: sputtering-pressure dependency
We found that the write-once-read-many-times (WORM, inerasable)-to-rewritable (erasable) transition phenomenon results from the different structures of the filament, which is determined by the grain orientations of the deposited films. The conduction mechanism of this switching transition and its impact on the synaptic behavior in various ZnO nanostructures are also discussed. Furthermore, our WORM devices have a programmable physical damage function that can be exploited for use in security systems against data theft, hacking, and unauthorized use of software/hardware. This work proposes ZnO-based nonvolatile memory for invisible electronic applications and gives valuable insight into the design of WORM and rewritable memories.
2184-2189
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Ohno, Takeo
09a9b78e-5127-4c98-a7b9-1ce850bed3cd
Samukawa, Seiji
27625089-b677-4289-95c2-07102eee6990
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Ohno, Takeo
09a9b78e-5127-4c98-a7b9-1ce850bed3cd
Samukawa, Seiji
27625089-b677-4289-95c2-07102eee6990

Simanjuntak, Firman Mangasa, Ohno, Takeo and Samukawa, Seiji (2019) Film-nanostructure-controlled inerasable-to-erasable switching transition in ZnO-based transparent memristor devices: sputtering-pressure dependency. ACS Applied Electronic Materials, 2184-2189. (doi:10.1021/acsaelm.9b00617).

Record type: Article

Abstract

We found that the write-once-read-many-times (WORM, inerasable)-to-rewritable (erasable) transition phenomenon results from the different structures of the filament, which is determined by the grain orientations of the deposited films. The conduction mechanism of this switching transition and its impact on the synaptic behavior in various ZnO nanostructures are also discussed. Furthermore, our WORM devices have a programmable physical damage function that can be exploited for use in security systems against data theft, hacking, and unauthorized use of software/hardware. This work proposes ZnO-based nonvolatile memory for invisible electronic applications and gives valuable insight into the design of WORM and rewritable memories.

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More information

Published date: 31 October 2019

Identifiers

Local EPrints ID: 448748
URI: http://eprints.soton.ac.uk/id/eprint/448748
PURE UUID: 426ca623-416e-44c4-b15f-fd58bd70d250

Catalogue record

Date deposited: 05 May 2021 16:30
Last modified: 25 Nov 2021 21:42

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Contributors

Author: Firman Mangasa Simanjuntak
Author: Takeo Ohno
Author: Seiji Samukawa

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