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Neutral oxygen beam treated ZnO-based resistive switching memory device

Neutral oxygen beam treated ZnO-based resistive switching memory device
Neutral oxygen beam treated ZnO-based resistive switching memory device
The room-temperature oxidation process allows irradiation with neutral oxygen particles onto the resistive layer that leads to the absorption of oxygen by the surface of the ZnO layer. The irradiation is effective in controlling the defect concentrations; thus, the ON and OFF resistances of devices can be significantly increased. These characteristics promote the occurrence of resistive switching at much lower current compliance as well as induce switching behavior in very thin ZnO films with thicknesses of 14–42 nm. The thickness dependence of the transformation from filamentary to homogeneous switching was also studied using the neutral beam technique, and the underlying mechanism is discussed.
18-24
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Ohno, Takeo
09a9b78e-5127-4c98-a7b9-1ce850bed3cd
Samukawa, Seiji
27625089-b677-4289-95c2-07102eee6990
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Ohno, Takeo
09a9b78e-5127-4c98-a7b9-1ce850bed3cd
Samukawa, Seiji
27625089-b677-4289-95c2-07102eee6990

Simanjuntak, Firman Mangasa, Ohno, Takeo and Samukawa, Seiji (2019) Neutral oxygen beam treated ZnO-based resistive switching memory device. ACS Applied Electronic Materials, 18-24. (doi:10.1021/acsaelm.8b00055).

Record type: Article

Abstract

The room-temperature oxidation process allows irradiation with neutral oxygen particles onto the resistive layer that leads to the absorption of oxygen by the surface of the ZnO layer. The irradiation is effective in controlling the defect concentrations; thus, the ON and OFF resistances of devices can be significantly increased. These characteristics promote the occurrence of resistive switching at much lower current compliance as well as induce switching behavior in very thin ZnO films with thicknesses of 14–42 nm. The thickness dependence of the transformation from filamentary to homogeneous switching was also studied using the neutral beam technique, and the underlying mechanism is discussed.

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Published date: 22 January 2019

Identifiers

Local EPrints ID: 448749
URI: http://eprints.soton.ac.uk/id/eprint/448749
PURE UUID: 8e4f411b-dd59-4216-a6d8-34d86e81b1ed

Catalogue record

Date deposited: 05 May 2021 16:30
Last modified: 25 Nov 2021 20:43

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Contributors

Author: Firman Mangasa Simanjuntak
Author: Takeo Ohno
Author: Seiji Samukawa

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