Improving linearity by introducing Al in HfO2 as a memristor synapse device
Improving linearity by introducing Al in HfO2 as a memristor synapse device
Artificial synapse having good linearity is crucial to achieve an efficient learning process in neuromorphic computing. It is found that the synaptic linearity can be enhanced by engineering the doping region across the switching layer. The nonlinearity of potentiation and depression of the pure device is 36% and 91%, respectively; meanwhile, the nonlinearity after doping can be suppressed to be 22% (potentiation) and 60% (depression). Henceforth, the learning accuracy of the doped device is 91% with only 13 iterations; meanwhile, the pure device is 78%. A detailed conduction mechanism to understand this phenomenon is proposed.
Chandrasekaran, Sridhar
8aece1e1-b034-4f63-b0b1-f9b1e4490765
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Saminathan, R.
667e5d1a-3e48-4b51-92b2-f146e7ac2a83
Panda, Debashis
e94eb431-589e-4a0a-82b8-0647442c0c5f
Tseng, Tseung-Yuen
b25672b0-7cd2-4c52-bb91-14d56d2777a9
20 August 2019
Chandrasekaran, Sridhar
8aece1e1-b034-4f63-b0b1-f9b1e4490765
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Saminathan, R.
667e5d1a-3e48-4b51-92b2-f146e7ac2a83
Panda, Debashis
e94eb431-589e-4a0a-82b8-0647442c0c5f
Tseng, Tseung-Yuen
b25672b0-7cd2-4c52-bb91-14d56d2777a9
Chandrasekaran, Sridhar, Simanjuntak, Firman Mangasa, Saminathan, R., Panda, Debashis and Tseng, Tseung-Yuen
(2019)
Improving linearity by introducing Al in HfO2 as a memristor synapse device.
Nanotechnology.
(doi:10.1088/1361-6528/ab3480).
Abstract
Artificial synapse having good linearity is crucial to achieve an efficient learning process in neuromorphic computing. It is found that the synaptic linearity can be enhanced by engineering the doping region across the switching layer. The nonlinearity of potentiation and depression of the pure device is 36% and 91%, respectively; meanwhile, the nonlinearity after doping can be suppressed to be 22% (potentiation) and 60% (depression). Henceforth, the learning accuracy of the doped device is 91% with only 13 iterations; meanwhile, the pure device is 78%. A detailed conduction mechanism to understand this phenomenon is proposed.
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Published date: 20 August 2019
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Local EPrints ID: 448756
URI: http://eprints.soton.ac.uk/id/eprint/448756
ISSN: 0957-4484
PURE UUID: 4f839f3b-e46f-4cae-b026-02e1542b9cc7
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Date deposited: 05 May 2021 16:30
Last modified: 17 Mar 2024 03:59
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Author:
Sridhar Chandrasekaran
Author:
Firman Mangasa Simanjuntak
Author:
R. Saminathan
Author:
Debashis Panda
Author:
Tseung-Yuen Tseng
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