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Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme

Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme
Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme
The synaptic plasticity of indium tin oxide (ITO)/ZnO/ITO highly transparent (more than 88%) analog switching resistive memory device is investigated. Highly stable analog switching behavior for more than 2500 cycles with a good memory window of approximately two orders makes it suitable for synapse application. The synaptic response is investigated by applying identical electrical pulses. The potentiation and depression of the device used the conventional identical single-pulse scheme to perform high nonlinearity (0.83) and decaying training epochs. However, the linearity and the training epochs are improved to 0.44 by implementing the identical double-pulse scheme. The proposed double-pulse scheme offers a broad dynamic range (200) having 320 conductance states. This invisible structure and double-pulse scheme can be highly suitable for the neuromorphic computing devices.
1557-9646
4722 - 4726
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panda, Debashis
0de17b04-a876-49e8-91d7-1eb50a34cf43
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panda, Debashis
0de17b04-a876-49e8-91d7-1eb50a34cf43
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Chandrasekaran, Sridhar, Simanjuntak, Firman Mangasa, Panda, Debashis and Tseng, Tseung-Yuen (2019) Enhanced synaptic linearity in ZnO-based invisible memristive synapse by introducing double pulsing scheme. IEEE Transactions on Electron Devices, 66 (11), 4722 - 4726. (doi:10.1109/TED.2019.2941764).

Record type: Article

Abstract

The synaptic plasticity of indium tin oxide (ITO)/ZnO/ITO highly transparent (more than 88%) analog switching resistive memory device is investigated. Highly stable analog switching behavior for more than 2500 cycles with a good memory window of approximately two orders makes it suitable for synapse application. The synaptic response is investigated by applying identical electrical pulses. The potentiation and depression of the device used the conventional identical single-pulse scheme to perform high nonlinearity (0.83) and decaying training epochs. However, the linearity and the training epochs are improved to 0.44 by implementing the identical double-pulse scheme. The proposed double-pulse scheme offers a broad dynamic range (200) having 320 conductance states. This invisible structure and double-pulse scheme can be highly suitable for the neuromorphic computing devices.

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More information

Published date: 27 September 2019

Identifiers

Local EPrints ID: 448758
URI: http://eprints.soton.ac.uk/id/eprint/448758
ISSN: 1557-9646
PURE UUID: 4e150e15-e44c-4e22-ae52-6f21b65df487

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Date deposited: 05 May 2021 16:30
Last modified: 25 Nov 2021 20:43

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Contributors

Author: Sridhar Chandrasekaran
Author: Firman Mangasa Simanjuntak
Author: Debashis Panda
Author: Tseung-Yuen Tseng

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