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Influence of rf sputter power on ZnO film characteristics for transparent memristor devices

Influence of rf sputter power on ZnO film characteristics for transparent memristor devices
Influence of rf sputter power on ZnO film characteristics for transparent memristor devices
The impact of the radio-frequency (rf) sputtering power on the switching characteristics of ZnO-based transparent memristor devices hasbeen investigated. Memristor devices made with a high rf power exhibited excellent switching characteristics; meanwhile, decreasing the rfpower led to less-apparent switching behavior and increased likelihood of device breakdown. However, high rf power memristors exhibiteda reduced switching uniformity as the rf power significantly affected the defect concentration as well as the microstructure of the deposited ZnO films, which determine the switching characteristics and performance of memristor devices.
2158-3226
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Ohno, Takeo
09a9b78e-5127-4c98-a7b9-1ce850bed3cd
Samukawa, Seiji
27625089-b677-4289-95c2-07102eee6990
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Ohno, Takeo
09a9b78e-5127-4c98-a7b9-1ce850bed3cd
Samukawa, Seiji
27625089-b677-4289-95c2-07102eee6990

Simanjuntak, Firman Mangasa, Ohno, Takeo and Samukawa, Seiji (2019) Influence of rf sputter power on ZnO film characteristics for transparent memristor devices. AIP Advances. (doi:10.1063/1.5125665).

Record type: Article

Abstract

The impact of the radio-frequency (rf) sputtering power on the switching characteristics of ZnO-based transparent memristor devices hasbeen investigated. Memristor devices made with a high rf power exhibited excellent switching characteristics; meanwhile, decreasing the rfpower led to less-apparent switching behavior and increased likelihood of device breakdown. However, high rf power memristors exhibiteda reduced switching uniformity as the rf power significantly affected the defect concentration as well as the microstructure of the deposited ZnO films, which determine the switching characteristics and performance of memristor devices.

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More information

Accepted/In Press date: 9 October 2019
Published date: 21 October 2019

Identifiers

Local EPrints ID: 448763
URI: http://eprints.soton.ac.uk/id/eprint/448763
ISSN: 2158-3226
PURE UUID: 9cf73176-40e1-43c8-b1fb-f8cb0a4dbd73

Catalogue record

Date deposited: 05 May 2021 16:31
Last modified: 25 Nov 2021 17:49

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Contributors

Author: Firman Mangasa Simanjuntak
Author: Takeo Ohno
Author: Seiji Samukawa

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