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ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices

ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices
Hydrogen peroxide treatment induces the phase transformation of hexagonal ZnO to cubic ZnO2 on the surface of the ZnO switching memory film; this oxidation process effectively reduces the concentration of n-type donor defects (oxygen vacancies and zinc interstitials) in the switching film. The chemically oxidized ZnO2 layer not only lowers the operation current of the device but also can serve as an oxygen “bank” to improve the endurance of the memristor. The oxidation reaction of peroxide treatment can be easily controlled to achieve an analog behavior with good switching uniformity. The analog memristor device is able to perform two-bit per cell and synaptic operations. Based on the experimental synaptic data, an image processing of 7 × 9 pixels using a simulated artificial neural network comprises 63 synapses is evaluated to mimic the visual cortex function of the brain.
2166-532X
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Lin, Chun-Chieh
db1e9099-7c0f-4136-a1ad-862f1e558d64
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Lin, Chun-Chieh
db1e9099-7c0f-4136-a1ad-862f1e558d64
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Simanjuntak, Firman Mangasa, Chandrasekaran, Sridhar, Lin, Chun-Chieh and Tseng, Tseung-Yuen (2019) ZnO2/ZnO bilayer switching film for making fully transparent analog memristor devices. APL Materials, 7, [051108]. (doi:10.1063/1.5092991).

Record type: Article

Abstract

Hydrogen peroxide treatment induces the phase transformation of hexagonal ZnO to cubic ZnO2 on the surface of the ZnO switching memory film; this oxidation process effectively reduces the concentration of n-type donor defects (oxygen vacancies and zinc interstitials) in the switching film. The chemically oxidized ZnO2 layer not only lowers the operation current of the device but also can serve as an oxygen “bank” to improve the endurance of the memristor. The oxidation reaction of peroxide treatment can be easily controlled to achieve an analog behavior with good switching uniformity. The analog memristor device is able to perform two-bit per cell and synaptic operations. Based on the experimental synaptic data, an image processing of 7 × 9 pixels using a simulated artificial neural network comprises 63 synapses is evaluated to mimic the visual cortex function of the brain.

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Published date: May 2019

Identifiers

Local EPrints ID: 448766
URI: http://eprints.soton.ac.uk/id/eprint/448766
ISSN: 2166-532X
PURE UUID: bcfe2bd2-9ea8-4a7f-8e71-a44b1753a205

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Date deposited: 05 May 2021 16:31
Last modified: 14 Sep 2021 20:44

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Contributors

Author: Firman Mangasa Simanjuntak
Author: Sridhar Chandrasekaran
Author: Chun-Chieh Lin
Author: Tseung-Yuen Tseng

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