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Switching failure mechanism in zinc peroxide-based programmable metallization cell

Switching failure mechanism in zinc peroxide-based programmable metallization cell
Switching failure mechanism in zinc peroxide-based programmable metallization cell
The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.
1931-7573
Simanjuntak, F.M.
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, S.
f822e829-d5fb-4150-8f55-53634a1705da
Lin, C.C.
db1e9099-7c0f-4136-a1ad-862f1e558d64
Tseng, T.Y.
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Simanjuntak, F.M.
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, S.
f822e829-d5fb-4150-8f55-53634a1705da
Lin, C.C.
db1e9099-7c0f-4136-a1ad-862f1e558d64
Tseng, T.Y.
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Simanjuntak, F.M., Chandrasekaran, S., Lin, C.C. and Tseng, T.Y. (2018) Switching failure mechanism in zinc peroxide-based programmable metallization cell. Nanoscale Research Letters. (doi:10.1186/s11671-018-2743-7).

Record type: Article

Abstract

The impact of peroxide surface treatment on the resistive switching characteristics of zinc peroxide (ZnO2)-based programmable metallization cell (PMC) devices is investigated. The peroxide treatment results in a ZnO hexagonal to ZnO2 cubic phase transformation; however, an excessive treatment results in crystalline decomposition. The chemically synthesized ZnO2 promotes the occurrence of switching behavior in Cu/ZnO2/ZnO/ITO with much lower operation current as compared to the Cu/ZnO/ITO (control device). However, the switching stability degrades as performing the peroxide treatment for a longer time. We suggest that the microstructure of the ZnO2 is responsible for this degradation behavior and fine tuning on ZnO2 properties, which is necessary to achieve proper switching characteristics in ZnO2-based PMC devices.

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Published date: 19 October 2018

Identifiers

Local EPrints ID: 448767
URI: http://eprints.soton.ac.uk/id/eprint/448767
ISSN: 1931-7573
PURE UUID: 392366c7-e9e3-49cd-b674-62827677f6e1

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Date deposited: 05 May 2021 16:31
Last modified: 14 Sep 2021 18:16

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Contributors

Author: F.M. Simanjuntak
Author: S. Chandrasekaran
Author: C.C. Lin
Author: T.Y. Tseng

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