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Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer

Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer
The effects of varying the thickness of the TiW barrier layer on the switching characteristics of a ZrO2-based electrochemical metallization memory (ECM) device were investigated. The thickness of the TiW barrier layer may alter the resistive switching characteristics of Cu/TiW/ZrO2/TiN ECM devices. Devices made without a TiW barrier layer exhibit unstable cycle-to-cycle behavior. The switching stability of ZrO2 devices improves after inserting a TiW layer. However, the insertion of TiW beyond critical thickness leads to switching degradation. We suggest that an appropriate TiW barrier layer thickness is necessary for achieving good switching performance.
0021-4922
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Chandrasekaran, Sridhar, Simanjuntak, Firman Mangasa and Tseng, Tseung-Yuen (2018) Controlled resistive switching characteristics of ZrO2-based electrochemical metallization memory devices by modifying the thickness of the metal barrier layer. Japanese Journal of Applied Physics, 57 (45), [04FE10]. (doi:10.7567/jjap.57.04fe10).

Record type: Article

Abstract

The effects of varying the thickness of the TiW barrier layer on the switching characteristics of a ZrO2-based electrochemical metallization memory (ECM) device were investigated. The thickness of the TiW barrier layer may alter the resistive switching characteristics of Cu/TiW/ZrO2/TiN ECM devices. Devices made without a TiW barrier layer exhibit unstable cycle-to-cycle behavior. The switching stability of ZrO2 devices improves after inserting a TiW layer. However, the insertion of TiW beyond critical thickness leads to switching degradation. We suggest that an appropriate TiW barrier layer thickness is necessary for achieving good switching performance.

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More information

Accepted/In Press date: 27 December 2017
Published date: 12 March 2018

Identifiers

Local EPrints ID: 448768
URI: http://eprints.soton.ac.uk/id/eprint/448768
ISSN: 0021-4922
PURE UUID: 06562e1a-af2c-4f67-a070-b01621a417e4

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Date deposited: 05 May 2021 16:31
Last modified: 26 Nov 2021 00:07

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Contributors

Author: Sridhar Chandrasekaran
Author: Firman Mangasa Simanjuntak
Author: Tseung-Yuen Tseng

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