Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory

Singh, Pragya, Simanjuntak, Firman Mangasa, Kumar, Amit and Tseng, Tseung-Yuen (2018) Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory. Thin Solid Films, 828-833. (doi:10.1016/j.tsf.2018.03.027).

Abstract

The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application.

This record has no associated files available for download.

Contributors

Author: Firman Mangasa Simanjuntak

Download statistics