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Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory

Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory
The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application.
0040-6090
828-833
Singh, Pragya
8fb95fa7-5174-48d9-b5ed-29c5f2574c5c
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Kumar, Amit
bac0df72-a532-4f39-8388-44991957df02
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Singh, Pragya
8fb95fa7-5174-48d9-b5ed-29c5f2574c5c
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Kumar, Amit
bac0df72-a532-4f39-8388-44991957df02
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Singh, Pragya, Simanjuntak, Firman Mangasa, Kumar, Amit and Tseng, Tseung-Yuen (2018) Resistive switching behavior of Ga doped ZnO-nanorods film conductive bridge random access memory. Thin Solid Films, 828-833. (doi:10.1016/j.tsf.2018.03.027).

Record type: Article

Abstract

The influence of Ga dopant on resistive switching behavior of ZnO-nanorods film conducting bridge random access memory was investigated. Using a hydrothermal process, we grew vertically well-aligned and uniform Ga doped ZnO (GZO)-NRs films on transparent glass substrates to fabricate Cu/TiW/GZO-NRs/Indium Tin Oxide/Glass devices. The GZO-NRs film provides a diffusion path for the Cu ions to form a conducting bridge; thus, reducing the formation of a branched filament. The Ga dopant induces a significant improvement in switching distribution of high resistance states (HRS) and low resistance states (LRS). The 1.5 mol% Ga doped device exhibits good retention up to 104 s and high HRS/LRS ratio of 30 times. Therefore, our proposed device structure may be a good candidate for future conductive-bridge resistive random access memory application.

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More information

Published date: 30 August 2018

Identifiers

Local EPrints ID: 448769
URI: http://eprints.soton.ac.uk/id/eprint/448769
ISSN: 0040-6090
PURE UUID: b65fa3c4-73ca-475e-9100-201e0628dccd

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Date deposited: 05 May 2021 16:31
Last modified: 25 Nov 2021 20:43

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Contributors

Author: Pragya Singh
Author: Firman Mangasa Simanjuntak
Author: Amit Kumar
Author: Tseung-Yuen Tseng

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