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Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell

Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell
An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.
0268-1242
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Singh, Pragya
8fb95fa7-5174-48d9-b5ed-29c5f2574c5c
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Lumbantoruan, Franky Juanda
fb38a5ff-7853-4f33-b44e-210751a2533d
Yang, Chih-Chieh
f0f88d96-c2bb-4490-b3cf-58b7bfa768f1
Huang, Chu-Jie
fa57a3aa-a882-44ec-be06-b11f52304395
Lin, Chun-Chieh
db1e9099-7c0f-4136-a1ad-862f1e558d64
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Singh, Pragya
8fb95fa7-5174-48d9-b5ed-29c5f2574c5c
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Lumbantoruan, Franky Juanda
fb38a5ff-7853-4f33-b44e-210751a2533d
Yang, Chih-Chieh
f0f88d96-c2bb-4490-b3cf-58b7bfa768f1
Huang, Chu-Jie
fa57a3aa-a882-44ec-be06-b11f52304395
Lin, Chun-Chieh
db1e9099-7c0f-4136-a1ad-862f1e558d64
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Simanjuntak, Firman Mangasa, Singh, Pragya, Chandrasekaran, Sridhar, Lumbantoruan, Franky Juanda, Yang, Chih-Chieh, Huang, Chu-Jie, Lin, Chun-Chieh and Tseng, Tseung-Yuen (2017) Role of nanorods insertion layer in ZnO-based electrochemical metallization memory cell. Semiconductor Science and Technology, 32, [124003]. (doi:10.1088/1361-6641/aa9598).

Record type: Article

Abstract

An engineering nanorod array in a ZnO-based electrochemical metallization device for nonvolatile memory applications was investigated. A hydrothermally synthesized nanorod layer was inserted into a Cu/ZnO/ITO device structure. Another device was fabricated without nanorods for comparison, and this device demonstrated a diode-like behavior with no switching behavior at a low current compliance (CC). The switching became clear only when the CC was increased to 75 mA. The insertion of a nanorods layer induced switching characteristics at a low operation current and improve the endurance and retention performances. The morphology of the nanorods may control the switching characteristics. A forming-free electrochemical metallization memory device having long switching cycles (>104 cycles) with a sufficient memory window (103 times) for data storage application, good switching stability and sufficient retention was successfully fabricated by adjusting the morphology and defect concentration of the inserted nanorod layer. The nanorod layer not only contributed to inducing resistive switching characteristics but also acted as both a switching layer and a cation diffusion control layer.

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More information

Published date: 9 November 2017

Identifiers

Local EPrints ID: 448813
URI: http://eprints.soton.ac.uk/id/eprint/448813
ISSN: 0268-1242
PURE UUID: 2c33b8a0-4815-4541-83c0-53972afbdf97

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Date deposited: 06 May 2021 16:31
Last modified: 26 Aug 2021 16:33

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Contributors

Author: Firman Mangasa Simanjuntak
Author: Pragya Singh
Author: Sridhar Chandrasekaran
Author: Franky Juanda Lumbantoruan
Author: Chih-Chieh Yang
Author: Chu-Jie Huang
Author: Chun-Chieh Lin
Author: Tseung-Yuen Tseng

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