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Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory

Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory
In this study, metal diffusion barrier-dependent switching polarity in ZrO2-based conducting-bridge random access memory was investigated. The device without the barrier layer (BL) exhibited nonpolar switching characteristics. However, inserting TiW BL resulted in positive reset failure. This phenomenon depends on the size and shape of the conducting bridge and also on the defects that contribute to the formation and rupture of the bridge. Consequently, the properties of the conducting bridge govern the device switching performance. Cu- and oxygen vacancy-based conducting bridge during N-Set for a device with and without the BL was proposed. The effect of the insertion of BL on the switching performance was also discussed. The absence of BL resulted in switching instability and poor nonvolatility. By contrast, a device with BL exhibited enhanced uniformity and nonvolatility, and the retention was more than 105 s at 200 °C.
0003-6951
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Tsai, Tsung-Ling
e7a4636d-8743-41a5-89e6-ba742f94dbb4
Lin, Chun-An
128c2baf-6e92-41bb-8697-4502ae108adf
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Tsai, Tsung-Ling
e7a4636d-8743-41a5-89e6-ba742f94dbb4
Lin, Chun-An
128c2baf-6e92-41bb-8697-4502ae108adf
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Chandrasekaran, Sridhar, Simanjuntak, Firman Mangasa, Tsai, Tsung-Ling, Lin, Chun-An and Tseng, Tseung-Yuen (2017) Effect of barrier layer on switching polarity of ZrO2-based conducting-bridge random access memory. Applied Physics Letters, 111, [113108]. (doi:10.1063/1.5003622).

Record type: Article

Abstract

In this study, metal diffusion barrier-dependent switching polarity in ZrO2-based conducting-bridge random access memory was investigated. The device without the barrier layer (BL) exhibited nonpolar switching characteristics. However, inserting TiW BL resulted in positive reset failure. This phenomenon depends on the size and shape of the conducting bridge and also on the defects that contribute to the formation and rupture of the bridge. Consequently, the properties of the conducting bridge govern the device switching performance. Cu- and oxygen vacancy-based conducting bridge during N-Set for a device with and without the BL was proposed. The effect of the insertion of BL on the switching performance was also discussed. The absence of BL resulted in switching instability and poor nonvolatility. By contrast, a device with BL exhibited enhanced uniformity and nonvolatility, and the retention was more than 105 s at 200 °C.

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Published date: 15 September 2017

Identifiers

Local EPrints ID: 448815
URI: http://eprints.soton.ac.uk/id/eprint/448815
ISSN: 0003-6951
PURE UUID: 97c9c06d-8994-499d-91c3-7a8a070c9ad4

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Date deposited: 06 May 2021 16:31
Last modified: 27 Aug 2021 16:30

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Contributors

Author: Sridhar Chandrasekaran
Author: Firman Mangasa Simanjuntak
Author: Tsung-Ling Tsai
Author: Chun-An Lin
Author: Tseung-Yuen Tseng

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