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One bipolar transistor selector - One resistive random access memory device for cross bar memory array

One bipolar transistor selector - One resistive random access memory device for cross bar memory array
One bipolar transistor selector - One resistive random access memory device for cross bar memory array
A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.
2158-3226
Aluguri, R.
64b91596-f449-47b8-b1e3-86ae7b5003ce
Kumar, D.
11bc7510-e9de-4358-96bf-155a56614d19
Simanjuntak, F. M.
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Tseng, T.-Y.
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Aluguri, R.
64b91596-f449-47b8-b1e3-86ae7b5003ce
Kumar, D.
11bc7510-e9de-4358-96bf-155a56614d19
Simanjuntak, F. M.
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Tseng, T.-Y.
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Aluguri, R., Kumar, D., Simanjuntak, F. M. and Tseng, T.-Y. (2017) One bipolar transistor selector - One resistive random access memory device for cross bar memory array. AIP Advances. (doi:10.1063/1.4994948).

Record type: Article

Abstract

A bipolar transistor selector was connected in series with a resistive switching memory device to study its memory characteristics for its application in cross bar array memory. The metal oxide based p-n-p bipolar transistor selector indicated good selectivity of about 104 with high retention and long endurance showing its usefulness in cross bar RRAM devices. Zener tunneling is found to be the main conduction phenomena for obtaining high selectivity. 1BT-1R device demonstrated good memory characteristics with non-linearity of 2 orders, selectivity of about 2 orders and long retention characteristics of more than 105 sec. One bit-line pull-up scheme shows that a 650 kb cross bar array made with this 1BT1R devices works well with more than 10 % read margin proving its ability in future memory technology application.

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Published date: September 2017

Identifiers

Local EPrints ID: 448837
URI: http://eprints.soton.ac.uk/id/eprint/448837
ISSN: 2158-3226
PURE UUID: dc1fb05a-2208-40d2-a4a9-eadec3cf98f1

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Date deposited: 06 May 2021 16:32
Last modified: 27 Aug 2021 16:30

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Contributors

Author: R. Aluguri
Author: D. Kumar
Author: F. M. Simanjuntak
Author: T.-Y. Tseng

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