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Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell

Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell
We explore the use of cubic-zinc peroxide (ZnO2) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2/ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 104 s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.
0957-4484
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Pattanayak, Bhaskar
9dd68f79-9367-4ebd-9773-e963193c48ea
Lin, Chun-Chieh
db1e9099-7c0f-4136-a1ad-862f1e558d64
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Pattanayak, Bhaskar
9dd68f79-9367-4ebd-9773-e963193c48ea
Lin, Chun-Chieh
db1e9099-7c0f-4136-a1ad-862f1e558d64
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Simanjuntak, Firman Mangasa, Chandrasekaran, Sridhar, Pattanayak, Bhaskar, Lin, Chun-Chieh and Tseng, Tseung-Yuen (2017) Peroxide induced volatile and non-volatile switching behavior in ZnO-based electrochemical metallization memory cell. Nanotechnology. (doi:10.1088/1361-6528/aa80b4).

Record type: Article

Abstract

We explore the use of cubic-zinc peroxide (ZnO2) as a switching material for electrochemical metallization memory (ECM) cell. The ZnO2 was synthesized with a simple peroxide surface treatment. Devices made without surface treatment exhibits a high leakage current due to the self-doped nature of the hexagonal-ZnO material. Thus, its switching behavior can only be observed when a very high current compliance is employed. The synthetic ZnO2 layer provides a sufficient resistivity to the Cu/ZnO2/ZnO/ITO devices. The high resistivity of ZnO2 encourages the formation of a conducting bridge to activate the switching behavior at a lower operation current. Volatile and non-volatile switching behaviors with sufficient endurance and an adequate memory window are observed in the surface-treated devices. The room temperature retention of more than 104 s confirms the non-volatility behavior of the devices. In addition, our proposed device structure is able to work at a lower operation current among other reported ZnO-based ECM cells.

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More information

Accepted/In Press date: 19 July 2017
Published date: 29 August 2017

Identifiers

Local EPrints ID: 448838
URI: http://eprints.soton.ac.uk/id/eprint/448838
ISSN: 0957-4484
PURE UUID: 7ba58cfb-6e32-416d-abbb-5a374f7801b6

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Date deposited: 06 May 2021 16:32
Last modified: 14 Sep 2021 17:47

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Contributors

Author: Firman Mangasa Simanjuntak
Author: Sridhar Chandrasekaran
Author: Bhaskar Pattanayak
Author: Chun-Chieh Lin
Author: Tseung-Yuen Tseng

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