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Resistive switching characteristics of hydrogen peroxide surface oxidized ZnO-based transparent resistive memory devices

Resistive switching characteristics of hydrogen peroxide surface oxidized ZnO-based transparent resistive memory devices
Resistive switching characteristics of hydrogen peroxide surface oxidized ZnO-based transparent resistive memory devices
The impact of hydrogen peroxide treatment on the surface of ZnO film used for transparent resistive memory device application has been investigated. The surface oxidation was conducted by immersing the ZnO film into a hydrogen peroxide solution. Switching characteristics of as-deposited and surface treated devices were initiated by double forming programming. Based on our previous result, superior memory performance can be achieved when the bipolar forming process is initiated to activate the switching behavior. However, in this experiment, such bipolar forming process cannot be performed on the as-deposited device Interestingly, after hydrogen peroxide surface treatment, the device is able to perform successful bipolar forming, thus, shows a distinct switching characteristic. Consequently, memory performance of surface treated device exhibits good endurance as compared to the as-deposited device. This study offers a novel and simple method to enhance switching performance of the transparent resistive memory devices.
1938-5862
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Pattanayak, Bhaskar
9dd68f79-9367-4ebd-9773-e963193c48ea
Lin, Chun-Chieh
db1e9099-7c0f-4136-a1ad-862f1e558d64
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Pattanayak, Bhaskar
9dd68f79-9367-4ebd-9773-e963193c48ea
Lin, Chun-Chieh
db1e9099-7c0f-4136-a1ad-862f1e558d64
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Simanjuntak, Firman Mangasa, Pattanayak, Bhaskar, Lin, Chun-Chieh and Tseng, Tseung-Yuen (2017) Resistive switching characteristics of hydrogen peroxide surface oxidized ZnO-based transparent resistive memory devices. ECS Transactions, 77 (4). (doi:10.1149/07704.0155ecst).

Record type: Article

Abstract

The impact of hydrogen peroxide treatment on the surface of ZnO film used for transparent resistive memory device application has been investigated. The surface oxidation was conducted by immersing the ZnO film into a hydrogen peroxide solution. Switching characteristics of as-deposited and surface treated devices were initiated by double forming programming. Based on our previous result, superior memory performance can be achieved when the bipolar forming process is initiated to activate the switching behavior. However, in this experiment, such bipolar forming process cannot be performed on the as-deposited device Interestingly, after hydrogen peroxide surface treatment, the device is able to perform successful bipolar forming, thus, shows a distinct switching characteristic. Consequently, memory performance of surface treated device exhibits good endurance as compared to the as-deposited device. This study offers a novel and simple method to enhance switching performance of the transparent resistive memory devices.

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Published date: 25 April 2017

Identifiers

Local EPrints ID: 448839
URI: http://eprints.soton.ac.uk/id/eprint/448839
ISSN: 1938-5862
PURE UUID: 7bf2fee1-c044-46e7-9904-d120f673e60c

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Date deposited: 06 May 2021 16:32
Last modified: 25 Nov 2021 20:43

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Contributors

Author: Firman Mangasa Simanjuntak
Author: Bhaskar Pattanayak
Author: Chun-Chieh Lin
Author: Tseung-Yuen Tseng

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