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The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2 -based resistive switching random access memory devices

The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2 -based resistive switching random access memory devices
The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2 -based resistive switching random access memory devices
The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon.
0040-6090
777-781
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Aluguri, Rakesh
64b91596-f449-47b8-b1e3-86ae7b5003ce
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df
Chandrasekaran, Sridhar
f822e829-d5fb-4150-8f55-53634a1705da
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Aluguri, Rakesh
64b91596-f449-47b8-b1e3-86ae7b5003ce
Tseng, Tseung-Yuen
c284f1b3-a030-4b56-bc22-5bfa2d9650df

Chandrasekaran, Sridhar, Simanjuntak, Firman Mangasa, Aluguri, Rakesh and Tseng, Tseung-Yuen (2018) The impact of TiW barrier layer thickness dependent transition from electro-chemical metallization memory to valence change memory in ZrO2 -based resistive switching random access memory devices. Thin Solid Films, 660, 777-781. (doi:10.1016/j.tsf.2018.03.065).

Record type: Article

Abstract

The effect of TiW metal barrier layer thickness on voltage-current characteristics of the Cu/TiW/ZrO2/TiN conductive bridge random access memory device was systematically investigated. The change of reset behavior from abrupt decrease to gradual decrease with increasing TiW thickness was observed. Electronic conduction during the forming process was also analyzed to obtain detailed information about the effect of TiW layer thickness on the nature of the conduction phenomenon. The temperature coefficient of resistance of the conductive filament confirms that an electro-chemical metallization (ECM) based conduction was observed in the devices made with a thinner TiW layer. On the other hand, valence change memory (VCM) based conduction was observed with a thick TiW layer. A conduction mechanism is proposed to explain the ECM to VCM conduction transformation phenomenon.

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Published date: 30 August 2018

Identifiers

Local EPrints ID: 448841
URI: http://eprints.soton.ac.uk/id/eprint/448841
ISSN: 0040-6090
PURE UUID: 4083d5db-e503-4ea0-8cb7-b00df5480f18

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Date deposited: 06 May 2021 16:32
Last modified: 25 Nov 2021 21:40

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Contributors

Author: Sridhar Chandrasekaran
Author: Firman Mangasa Simanjuntak
Author: Rakesh Aluguri
Author: Tseung-Yuen Tseng

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