Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming
Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming
The influence of single and double forming on the switching stability of AZO/ZnO1−x/ITO transparent resistive memory devices was investigated. Devices that underwent single forming exhibited severe switching instability, where as those that underwent double forming exhibited excellent switching uniformity. The quantity of conducting filaments can be limited by applying the two-step forming process. Consequently, the set/reset process can be controlled, enhancing switching stability. Satisfactory endurance with an acceptable ON/OFF ratio of 102 and satisfactory retention behavior of 104 s at room temperature confirmed the reliability of optimized devices. Furthermore, highly transparent devices (transparency of approximately 85% in visible range) have been fabricated.
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panda, Debashis
e94eb431-589e-4a0a-82b8-0647442c0c5f
Tsai, Tsung-Ling
e7a4636d-8743-41a5-89e6-ba742f94dbb4
Lin, Chun-An
128c2baf-6e92-41bb-8697-4502ae108adf
Wei, Kung-Hwa
3b02361f-28aa-4a6a-948f-da9cc1b67eef
Tseng, Tseung-Yuen
b25672b0-7cd2-4c52-bb91-14d56d2777a9
Simanjuntak, Firman Mangasa
a5b8dd07-002c-4520-9f67-2dc20d2ff0d5
Panda, Debashis
e94eb431-589e-4a0a-82b8-0647442c0c5f
Tsai, Tsung-Ling
e7a4636d-8743-41a5-89e6-ba742f94dbb4
Lin, Chun-An
128c2baf-6e92-41bb-8697-4502ae108adf
Wei, Kung-Hwa
3b02361f-28aa-4a6a-948f-da9cc1b67eef
Tseng, Tseung-Yuen
b25672b0-7cd2-4c52-bb91-14d56d2777a9
Simanjuntak, Firman Mangasa, Panda, Debashis, Tsai, Tsung-Ling, Lin, Chun-An, Wei, Kung-Hwa and Tseng, Tseung-Yuen
(2015)
Enhanced switching uniformity in AZO/ZnO1−x/ITO transparent resistive memory devices by bipolar double forming.
Applied Physics Letters, 107, [033505].
(doi:10.1063/1.4927284).
Abstract
The influence of single and double forming on the switching stability of AZO/ZnO1−x/ITO transparent resistive memory devices was investigated. Devices that underwent single forming exhibited severe switching instability, where as those that underwent double forming exhibited excellent switching uniformity. The quantity of conducting filaments can be limited by applying the two-step forming process. Consequently, the set/reset process can be controlled, enhancing switching stability. Satisfactory endurance with an acceptable ON/OFF ratio of 102 and satisfactory retention behavior of 104 s at room temperature confirmed the reliability of optimized devices. Furthermore, highly transparent devices (transparency of approximately 85% in visible range) have been fabricated.
This record has no associated files available for download.
More information
e-pub ahead of print date: 21 July 2015
Identifiers
Local EPrints ID: 448843
URI: http://eprints.soton.ac.uk/id/eprint/448843
ISSN: 0003-6951
PURE UUID: b6ba0b2d-419e-4ee9-aa5c-84e196072c51
Catalogue record
Date deposited: 06 May 2021 16:33
Last modified: 17 Mar 2024 03:59
Export record
Altmetrics
Contributors
Author:
Firman Mangasa Simanjuntak
Author:
Debashis Panda
Author:
Tsung-Ling Tsai
Author:
Chun-An Lin
Author:
Kung-Hwa Wei
Author:
Tseung-Yuen Tseng
Download statistics
Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.
View more statistics