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Following tellurium deposition in mesoporous cubic silica by in situ time-of-flight GISANS

Following tellurium deposition in mesoporous cubic silica by in situ time-of-flight GISANS
Following tellurium deposition in mesoporous cubic silica by in situ time-of-flight GISANS
Mesoporous silica films with 8-10 nm pores have been produced in our labs by Evaporation Induced Self Assembly (EISA). These shall be used as template for the fabrication of nanostructured thermoelectric devices, which requires the electrodeposition of Te into the porous structure. Diffusion into the pores is limited due to their size, which is why ultra-short pulses have to be used in order to obtain homogeneous filling as otherwise, individual pores might fill up quickly and become the center of deposition. Using TOF-GISANS, we want to reveal under which conditions the deposition happens from the bottom to the top of the film and at which depth the likelihood of parasitic nucleation is highest. This experiment will also indicate, whether the filling of the cubic network with a hexagonal structure is possible, which might happen in the mass-transport limited deposition regime.
Institut Laue-Langevin
Ernest, MOEHL Gilles
c3f40572-28c6-4467-a118-502000132f8c
Robert, Cubitt
f14d3bd4-ea2d-43f7-8152-a0990d86f5a7
Andrew, HECTOR
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
LI, Shao
5ad941b0-9911-4b2a-9212-472cc9658076
Ernest, MOEHL Gilles
c3f40572-28c6-4467-a118-502000132f8c
Robert, Cubitt
f14d3bd4-ea2d-43f7-8152-a0990d86f5a7
Andrew, HECTOR
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
LI, Shao
5ad941b0-9911-4b2a-9212-472cc9658076

(2019) Following tellurium deposition in mesoporous cubic silica by in situ time-of-flight GISANS. Institut Laue-Langevin doi:10.5291/ill-data.1-04-162 [Dataset]

Record type: Dataset

Abstract

Mesoporous silica films with 8-10 nm pores have been produced in our labs by Evaporation Induced Self Assembly (EISA). These shall be used as template for the fabrication of nanostructured thermoelectric devices, which requires the electrodeposition of Te into the porous structure. Diffusion into the pores is limited due to their size, which is why ultra-short pulses have to be used in order to obtain homogeneous filling as otherwise, individual pores might fill up quickly and become the center of deposition. Using TOF-GISANS, we want to reveal under which conditions the deposition happens from the bottom to the top of the film and at which depth the likelihood of parasitic nucleation is highest. This experiment will also indicate, whether the filling of the cubic network with a hexagonal structure is possible, which might happen in the mass-transport limited deposition regime.

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More information

Published date: 1 January 2019

Identifiers

Local EPrints ID: 448904
URI: http://eprints.soton.ac.uk/id/eprint/448904
PURE UUID: 0a8d3b5f-7a8b-479a-afef-988f4d2ab7fd
ORCID for MOEHL Gilles Ernest: ORCID iD orcid.org/0000-0003-4910-3601
ORCID for HECTOR Andrew: ORCID iD orcid.org/0000-0002-9964-2163

Catalogue record

Date deposited: 10 May 2021 16:32
Last modified: 23 Sep 2021 04:31

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Contributors

Contributor: MOEHL Gilles Ernest ORCID iD
Contributor: Cubitt Robert
Contributor: HECTOR Andrew ORCID iD
Contributor: Shao LI

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