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Frequency response of metal-oxide memristors

Frequency response of metal-oxide memristors
Frequency response of metal-oxide memristors

Memristors have been at the forefront of nanoelectronics research for the last few decades, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their state-dependent programmability in a static fashion. However, practical applications of memristor-based alternating current (ac) circuits have been rather sparse, with only a few examples found in the literature where their use is emulated at higher frequencies. In this work, we study the behavior of metal-oxide memristors under a noninvasive ac perturbation in a range of frequencies, from 103 to 107 Hz. Metal-oxide memristors are found to behave as RC low-pass filters and they present a variable cut-off frequency when their state is switched, thus providing a window of reconfigurability when used as filters. We further study this behavior across distinct material systems, and we show that the usable reconfigurability window of the devices can be tailored to encompass specific frequency ranges by amending the devices' capacitance. This study extends current knowledge on metal-oxide memristors by characterizing their frequency-dependent characteristics, providing useful insights for their use in reconfigurable ac circuits.

AC, Analogue, Frequency, Impedance, Memristor, RRAM, reconfigurable
1557-9646
3636 - 3642
Manouras, Vasileios
560dba43-4b76-44e0-ba9a-25ed2bcdd953
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Garlapati, Suresh K
dd6c248d-65ac-4a68-b843-0ac6be63ace6
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf
Manouras, Vasileios
560dba43-4b76-44e0-ba9a-25ed2bcdd953
Stathopoulos, Spyros
98d12f06-ad01-4708-be19-a97282968ee6
Garlapati, Suresh K
dd6c248d-65ac-4a68-b843-0ac6be63ace6
Serb, Alexantrou
30f5ec26-f51d-42b3-85fd-0325a27a792c
Prodromakis, Themistoklis
d58c9c10-9d25-4d22-b155-06c8437acfbf

Manouras, Vasileios, Stathopoulos, Spyros, Garlapati, Suresh K, Serb, Alexantrou and Prodromakis, Themistoklis (2021) Frequency response of metal-oxide memristors. IEEE Transactions on Electron Devices, 68 (7), 3636 - 3642, [9440670]. (doi:10.1109/TED.2021.3080233).

Record type: Article

Abstract

Memristors have been at the forefront of nanoelectronics research for the last few decades, offering a valuable component to reconfigurable computing. Their attributes have been studied extensively along with applications that leverage their state-dependent programmability in a static fashion. However, practical applications of memristor-based alternating current (ac) circuits have been rather sparse, with only a few examples found in the literature where their use is emulated at higher frequencies. In this work, we study the behavior of metal-oxide memristors under a noninvasive ac perturbation in a range of frequencies, from 103 to 107 Hz. Metal-oxide memristors are found to behave as RC low-pass filters and they present a variable cut-off frequency when their state is switched, thus providing a window of reconfigurability when used as filters. We further study this behavior across distinct material systems, and we show that the usable reconfigurability window of the devices can be tailored to encompass specific frequency ranges by amending the devices' capacitance. This study extends current knowledge on metal-oxide memristors by characterizing their frequency-dependent characteristics, providing useful insights for their use in reconfigurable ac circuits.

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Frequency Response of Metal-Oxide Memristors - Accepted Manuscript
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Accepted/In Press date: 6 May 2021
e-pub ahead of print date: 25 May 2021
Published date: July 2021
Additional Information: Funding Information: Manuscript received February 23, 2021; revised April 30, 2021; accepted May 6, 2021. Date of publication May 25, 2021; date of current version June 23, 2021. This work was supported in part by the Engineering and Physical Sciences Research Council (EPSRC) under Grant EP/R024642/1 and in part by the European Union Horizon 2020 Project under Grant 824162. The review of this article was arranged by Editor B. Iñiguez. (Corresponding author: Vasileios Manouras.) The authors are with the Center for Electronics Frontiers, Zepler Institute for Photonics and Nanoelectronics, University of Southampton, Southampton SO17 1BJ, U.K. (e-mail: v.manouras@soton.ac.uk; s.stathopoulos@soton.ac.uk; garlapatisureshkumar@gmail.com; a.serb@soton.ac.uk; t.prodromakis@soton.ac.uk). Publisher Copyright: © 1963-2012 IEEE.
Keywords: AC, Analogue, Frequency, Impedance, Memristor, RRAM, reconfigurable

Identifiers

Local EPrints ID: 449227
URI: http://eprints.soton.ac.uk/id/eprint/449227
ISSN: 1557-9646
PURE UUID: 2470e35f-3c37-445a-ac0c-bbc7ad866ee5
ORCID for Spyros Stathopoulos: ORCID iD orcid.org/0000-0002-0833-6209
ORCID for Themistoklis Prodromakis: ORCID iD orcid.org/0000-0002-6267-6909

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Date deposited: 20 May 2021 16:31
Last modified: 17 Mar 2024 06:34

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Contributors

Author: Vasileios Manouras
Author: Spyros Stathopoulos ORCID iD
Author: Suresh K Garlapati
Author: Alexantrou Serb
Author: Themistoklis Prodromakis ORCID iD

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