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Electro-thermal characterization of 1.2 kV normally-on SiC JFETs under hard switch fault

Electro-thermal characterization of 1.2 kV normally-on SiC JFETs under hard switch fault
Electro-thermal characterization of 1.2 kV normally-on SiC JFETs under hard switch fault

In this paper, the robustness of 1.2 kV normally-on SiC JFETs against short circuits is investigated through experimental parametric analysis and three-dimensional thermal model simulation. Particular emphasis is given to the study of short circuits in the wiring outside the power converter, in which case, a large stray inductance is part of the main power loop. This work presents a more accurate and realistic analysis of the subject, absent from relative literature, since stray inductances are usually ignored. A destructive test is performed in order to obtain the short circuit withstand capability and the failure mechanism of the power device. The experimental results reveal that the loss of the gate control is attributed to the punch-through voltage increase with higher temperatures and depends on the gate current and consequently the turn-off gate resistor.

Faults, Reliability, Robustness, Short-Circuit, Silicon Carbide (SiC)
Institute of Electrical and Electronics Engineers Inc.
Kampitsis, Georgios
4bba7bcf-6422-4bf9-8996-528e7da1984e
Batzelis, Efstratios
2a85086e-e403-443c-81a6-e3b4ee16ae5e
Gati, Eleni
19d45fca-3759-42cb-a373-5adb6bf7bdeb
Papathanassiou, Stavros
49cbcb43-649a-47c2-b294-9bc4d88898b9
Manias, Stefanos
83ed0459-8a4f-41bf-9f55-ddb2686e4272
Kampitsis, Georgios
4bba7bcf-6422-4bf9-8996-528e7da1984e
Batzelis, Efstratios
2a85086e-e403-443c-81a6-e3b4ee16ae5e
Gati, Eleni
19d45fca-3759-42cb-a373-5adb6bf7bdeb
Papathanassiou, Stavros
49cbcb43-649a-47c2-b294-9bc4d88898b9
Manias, Stefanos
83ed0459-8a4f-41bf-9f55-ddb2686e4272

Kampitsis, Georgios, Batzelis, Efstratios, Gati, Eleni, Papathanassiou, Stavros and Manias, Stefanos (2015) Electro-thermal characterization of 1.2 kV normally-on SiC JFETs under hard switch fault. In 2015 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015. Institute of Electrical and Electronics Engineers Inc.. (doi:10.1109/EPE.2015.7309054).

Record type: Conference or Workshop Item (Paper)

Abstract

In this paper, the robustness of 1.2 kV normally-on SiC JFETs against short circuits is investigated through experimental parametric analysis and three-dimensional thermal model simulation. Particular emphasis is given to the study of short circuits in the wiring outside the power converter, in which case, a large stray inductance is part of the main power loop. This work presents a more accurate and realistic analysis of the subject, absent from relative literature, since stray inductances are usually ignored. A destructive test is performed in order to obtain the short circuit withstand capability and the failure mechanism of the power device. The experimental results reveal that the loss of the gate control is attributed to the punch-through voltage increase with higher temperatures and depends on the gate current and consequently the turn-off gate resistor.

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More information

Published date: 27 October 2015
Additional Information: Publisher Copyright: © 2015 EPE Association and IEEE. Copyright: Copyright 2017 Elsevier B.V., All rights reserved.
Venue - Dates: 17th European Conference on Power Electronics and Applications, EPE-ECCE Europe 2015, , Geneva, Switzerland, 2015-09-07 - 2015-09-09
Keywords: Faults, Reliability, Robustness, Short-Circuit, Silicon Carbide (SiC)

Identifiers

Local EPrints ID: 449661
URI: http://eprints.soton.ac.uk/id/eprint/449661
PURE UUID: 8febefbe-f84d-46f5-8073-abd1c149e72d
ORCID for Efstratios Batzelis: ORCID iD orcid.org/0000-0002-2967-3677

Catalogue record

Date deposited: 10 Jun 2021 16:31
Last modified: 08 Jan 2022 03:44

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Contributors

Author: Georgios Kampitsis
Author: Efstratios Batzelis ORCID iD
Author: Eleni Gati
Author: Stavros Papathanassiou
Author: Stefanos Manias

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