This dataset is for the paper titled "Lateral growth of MoS2 2D material semiconductors over an insulator via electrodeposition"
Wiley Advanced Electronic Materials DOI https://doi.org/10.1002/aelm.202100419. Please use this DOI for any citations.

Nema M. Abdelazim, Yasir J. Noori, Shibin Thomas, Victoria K. Greenacre, Yisong Han, Danielle E. Smith, Giacomo Piana, 
Nikolay Zhelev, Andrew L. Hector, Richard Beanland, Gillian Reid, Philip N. Bartlett, Cornelis H. de Groot

The dataset contains excel files containing the data for

Figure 1c: Cyclic voltammetry electrodeposition scans comparison between a large-area planar TiN electrode (diameter 4 mm) and one of the TiN lateral growth electrodes.
Figure 2e: Topography line profiles collected from images (a-d). The figure shows indications of the vertical growth (H) and lateral growth (L) that were considered for analysis in this work.
Figure 2f: A linear fit of the growth length vs time obtained from the three samples.
Figure 3a: stack of Raman spectra showing that the MoS2 signal is solely observed from the laterally grown films with no Raman signatures from areas away from the electrodes or at the centre above them.
Figure 5a: Multiple Current-Voltage sweeps from MoS2 devices grown multiple times for 20, 45 and 90 minutes showing an open circuit after 20 min film growth and a great increase in current from 45 min growth to 90 minutes.
Figure 5b: Photo-illumination cycles of a sample showing the switching induced photocurrent with a switching laser source.
Figure 5c: The change in photoresponsivity as the power density of the excitation laser is changed.