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Lateral growth of MoS2 2D material semiconductors over an insulator via electrodeposition

Lateral growth of MoS2 2D material semiconductors over an insulator via electrodeposition
Lateral growth of MoS2 2D material semiconductors over an insulator via electrodeposition

Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides are connected over an insulating substrate, hence, forming a lateral device structure through only one lithography and deposition step. Using a variety of characterization techniques, the growth rate of MoS2 is shown to be highly anisotropic with lateral to vertical growth ratios exceeding 20-fold. Electronic and photo-response measurements on the device structures demonstrate that the electrodeposited MoS2 layers behave like semiconductors, confirming their potential for photodetection applications. This lateral growth technique paves the way toward room temperature, scalable, and site-selective production of various transition metal dichalcogenides and their lateral heterostructures for 2D materials-based fabricated devices.

2D-materials, MoS, electrodeposition, photodetectors, transition metal dichalcogenides
1-8
Noori, Yasir
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Abdelazim, Nema
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Thomas, Shibin
f9dd0751-582b-4c35-9725-36fbe08bbda8
Greenacre, Victoria
c665a38b-0b1a-4671-ac75-bf0679dd1c57
Han, Yisong
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Smith, Danielle
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Piana, Giacomo M
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Zhelev, Nikolay
76a8a0dd-0c24-4483-a217-b17ee26bd79b
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Beanland, Richard
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Reid, Gillian
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Bartlett, Philip N.
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De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Abdelazim, Nema
2ac8bd5e-cbf1-4d9a-adcb-65dedf244b9b
Thomas, Shibin
f9dd0751-582b-4c35-9725-36fbe08bbda8
Greenacre, Victoria
c665a38b-0b1a-4671-ac75-bf0679dd1c57
Han, Yisong
9307e57c-85b5-461d-93c5-9c3081224c02
Smith, Danielle
aae55f94-b99a-4e9f-9d1b-8bcd3f2a93b6
Piana, Giacomo M
3154f35e-0273-453f-b3b9-97b19d8d856e
Zhelev, Nikolay
76a8a0dd-0c24-4483-a217-b17ee26bd79b
Hector, Andrew L.
f19a8f31-b37f-4474-b32a-b7cf05b9f0e5
Beanland, Richard
f5ff7f86-c400-4a2a-8e38-421ed4d3a420
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c

Noori, Yasir, Abdelazim, Nema, Thomas, Shibin, Greenacre, Victoria, Han, Yisong, Smith, Danielle, Piana, Giacomo M, Zhelev, Nikolay, Hector, Andrew L., Beanland, Richard, Reid, Gillian, Bartlett, Philip N. and De Groot, Kees (2021) Lateral growth of MoS2 2D material semiconductors over an insulator via electrodeposition. Advanced Electronic Materials, 7 (9), 1-8, [2100419]. (doi:10.1002/aelm.202100419).

Record type: Article

Abstract

Developing novel techniques for depositing transition metal dichalcogenides is crucial for the industrial adoption of 2D materials in optoelectronics. In this work, the lateral growth of molybdenum disulfide (MoS2) over an insulating surface is demonstrated using electrochemical deposition. By fabricating a new type of microelectrodes, MoS2 2D films grown from TiN electrodes across opposite sides are connected over an insulating substrate, hence, forming a lateral device structure through only one lithography and deposition step. Using a variety of characterization techniques, the growth rate of MoS2 is shown to be highly anisotropic with lateral to vertical growth ratios exceeding 20-fold. Electronic and photo-response measurements on the device structures demonstrate that the electrodeposited MoS2 layers behave like semiconductors, confirming their potential for photodetection applications. This lateral growth technique paves the way toward room temperature, scalable, and site-selective production of various transition metal dichalcogenides and their lateral heterostructures for 2D materials-based fabricated devices.

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e-pub ahead of print date: 30 June 2021
Published date: 30 June 2021
Additional Information: Funding Information: N.M.A., Y.J.N., and S.T. contributed equally to this work. The research work reported in this article was financially supported by the Engineering and Physical Sciences Research Council (EPSRC) through the research grant EP/P025137/1 (2D layered transition metal dichalcogenide semiconductors via non‐aqueous electrodeposition) and the programme grant EP/N035437/1 (ADEPT – Advanced Devices by ElectroPlaTing).
Keywords: 2D-materials, MoS, electrodeposition, photodetectors, transition metal dichalcogenides

Identifiers

Local EPrints ID: 450145
URI: http://eprints.soton.ac.uk/id/eprint/450145
PURE UUID: 43ac03f0-b4e7-426a-9fa5-1ab92ae3dee9
ORCID for Yasir Noori: ORCID iD orcid.org/0000-0001-5285-8779
ORCID for Andrew L. Hector: ORCID iD orcid.org/0000-0002-9964-2163
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468
ORCID for Philip N. Bartlett: ORCID iD orcid.org/0000-0002-7300-6900
ORCID for Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101

Catalogue record

Date deposited: 13 Jul 2021 16:32
Last modified: 15 Sep 2021 02:20

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Contributors

Author: Yasir Noori ORCID iD
Author: Nema Abdelazim
Author: Shibin Thomas
Author: Victoria Greenacre
Author: Yisong Han
Author: Danielle Smith
Author: Giacomo M Piana
Author: Nikolay Zhelev
Author: Richard Beanland
Author: Gillian Reid ORCID iD
Author: Kees De Groot ORCID iD

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