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Phase change memory by GeSbTe electrodeposition in crossbar arrays

Phase change memory by GeSbTe electrodeposition in crossbar arrays
Phase change memory by GeSbTe electrodeposition in crossbar arrays
Phase change memory is an emerging type of non-volatile memory that shows a strong presence in the data-storage market. This technology has also recently attracted significant research interest in the development of non-Von Neumann computing architectures such as in-memory and neuromorphic computing. Research in these areas has been primarily motivated by the scalability potential of phase change materials in crossbar architectures and their compatibility with industrial nanofabrication processes. In this work, we have developed crossbar phase change memory arrays through the electrodeposition of GeSbTe (GST). We show that GST can be electrodeposited in nanofabricated TiN crossbar arrays using a scalable process. Various characterisation techniques, such as AFM, TEM and EDX were used to study the electrodeposited materials in these arrays. Phase switching tests of the electrodeposited materials have shown a resistance switching ratio of 2 orders of magnitude with an endurance of around 80 cycles. Demonstrating crossbar phase change memories via electrodeposition paves the way towards using this technique for developing scalable memory arrays involving electrodeposited materials for passive selectors and phase switching devices.
Crossbar array, Electrodeposition, GeSbTe, Non-aqueous, germanium antimony telluride, phase-change memory, titanium nitride
3610-3618
Noori, Yasir
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Meng, Lingcong
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Hamdiyah, Ayoub Hassan Jaafar
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Zhang, Wenjian
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Kissling, Gabriela
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Han, Yisong
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Abdelazim, Nema
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Alibouri, Mehrdad
5e9c514c-8fd0-4af8-9171-bfb9647a53ea
Leblanc, Kathleen
43dcedc1-8bb0-4929-ac9d-b3eeccad74c5
Zhelev, Nikolay
76a8a0dd-0c24-4483-a217-b17ee26bd79b
Huang, Ruomeng
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Beanland, Richard
f5ff7f86-c400-4a2a-8e38-421ed4d3a420
Smith, David
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Reid, Gillian
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De Groot, Kees
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Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075
Noori, Yasir
704d0b70-1ea6-4e00-92ce-cc2543087a09
Meng, Lingcong
8de7a0cb-c6aa-4dfd-94f5-bcdae5105a56
Hamdiyah, Ayoub Hassan Jaafar
ca3d9e21-e81e-491e-8a8a-b7b8f6e9fc84
Zhang, Wenjian
1f80ac5e-d4c2-4720-b19e-be700cd411e7
Kissling, Gabriela
b9ad7a6b-70b9-48b6-ac03-a189278dd2d9
Han, Yisong
9307e57c-85b5-461d-93c5-9c3081224c02
Abdelazim, Nema
2ac8bd5e-cbf1-4d9a-adcb-65dedf244b9b
Alibouri, Mehrdad
5e9c514c-8fd0-4af8-9171-bfb9647a53ea
Leblanc, Kathleen
43dcedc1-8bb0-4929-ac9d-b3eeccad74c5
Zhelev, Nikolay
76a8a0dd-0c24-4483-a217-b17ee26bd79b
Huang, Ruomeng
55c6fba5-0275-4471-af5c-fb0dd2daaa64
Beanland, Richard
f5ff7f86-c400-4a2a-8e38-421ed4d3a420
Smith, David
d9b2c02d-b7ea-498b-9ea1-208a1681536f
Reid, Gillian
37d35b11-40ce-48c5-a68e-f6ce04cd4037
De Groot, Kees
92cd2e02-fcc4-43da-8816-c86f966be90c
Bartlett, Philip N.
d99446db-a59d-4f89-96eb-f64b5d8bb075

Noori, Yasir, Meng, Lingcong, Hamdiyah, Ayoub Hassan Jaafar, Zhang, Wenjian, Kissling, Gabriela, Han, Yisong, Abdelazim, Nema, Alibouri, Mehrdad, Leblanc, Kathleen, Zhelev, Nikolay, Huang, Ruomeng, Beanland, Richard, Smith, David, Reid, Gillian, De Groot, Kees and Bartlett, Philip N. (2021) Phase change memory by GeSbTe electrodeposition in crossbar arrays. ACS Applied Electronic Materials, 3 (8), 3610-3618. (doi:10.1021/acsaelm.1c00491).

Record type: Article

Abstract

Phase change memory is an emerging type of non-volatile memory that shows a strong presence in the data-storage market. This technology has also recently attracted significant research interest in the development of non-Von Neumann computing architectures such as in-memory and neuromorphic computing. Research in these areas has been primarily motivated by the scalability potential of phase change materials in crossbar architectures and their compatibility with industrial nanofabrication processes. In this work, we have developed crossbar phase change memory arrays through the electrodeposition of GeSbTe (GST). We show that GST can be electrodeposited in nanofabricated TiN crossbar arrays using a scalable process. Various characterisation techniques, such as AFM, TEM and EDX were used to study the electrodeposited materials in these arrays. Phase switching tests of the electrodeposited materials have shown a resistance switching ratio of 2 orders of magnitude with an endurance of around 80 cycles. Demonstrating crossbar phase change memories via electrodeposition paves the way towards using this technique for developing scalable memory arrays involving electrodeposited materials for passive selectors and phase switching devices.

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Article - Accepted Manuscript
Restricted to Repository staff only until 2 August 2022.
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Published date: 2 August 2021
Keywords: Crossbar array, Electrodeposition, GeSbTe, Non-aqueous, germanium antimony telluride, phase-change memory, titanium nitride

Identifiers

Local EPrints ID: 450690
URI: http://eprints.soton.ac.uk/id/eprint/450690
PURE UUID: da39feae-0c55-4591-84d5-9340f3eb5ce2
ORCID for Yasir Noori: ORCID iD orcid.org/0000-0001-5285-8779
ORCID for Lingcong Meng: ORCID iD orcid.org/0000-0002-3995-3584
ORCID for Ayoub Hassan Jaafar Hamdiyah: ORCID iD orcid.org/0000-0001-7305-4542
ORCID for Gabriela Kissling: ORCID iD orcid.org/0000-0003-4701-7160
ORCID for Gillian Reid: ORCID iD orcid.org/0000-0001-5349-3468
ORCID for Kees De Groot: ORCID iD orcid.org/0000-0002-3850-7101
ORCID for Philip N. Bartlett: ORCID iD orcid.org/0000-0002-7300-6900

Catalogue record

Date deposited: 06 Aug 2021 16:31
Last modified: 26 Nov 2021 03:23

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Contributors

Author: Yasir Noori ORCID iD
Author: Lingcong Meng ORCID iD
Author: Ayoub Hassan Jaafar Hamdiyah ORCID iD
Author: Wenjian Zhang
Author: Gabriela Kissling ORCID iD
Author: Yisong Han
Author: Nema Abdelazim
Author: Mehrdad Alibouri
Author: Nikolay Zhelev
Author: Ruomeng Huang
Author: Richard Beanland
Author: David Smith
Author: Gillian Reid ORCID iD
Author: Kees De Groot ORCID iD

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