READ ME File For 'Dataset supporting the article "Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays"'

Dataset DOI: 10.5258/SOTON/D1907

Date that the file was created: April, 2024

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GENERAL INFORMATION
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ReadMe Author: Yasir Noori, University of Southampton 

Date of data collection: 24/7/2021


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SHARING/ACCESS INFORMATION
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Licenses/restrictions placed on the data, or limitations of reuse: CC BY

This dataset supports the publication:
"Phase Change Memory by GeSbTe Electrodeposition in Crossbar Arrays" 
by Yasir J. Noori, Lingcong Meng, Ayoub H. Jaafar, Wenjian Zhang, Gabriela P. Kissling, Yisong Han, Nema Abdelazim, Mehrdad Alibouri, Kathleen LeBlanc, Nikolay Zhelev, Ruomeng Huang, Richard Beanland, David C. Smith, Gillian Reid, Kees de Groot, and Philip N. Bartlett,
Applied Electronic Materials, 2021, 3, 8, 3610–3618.
https://doi.org/10.1021/acsaelm.1c00491.



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DATA & FILE OVERVIEW
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The dataset contains excel files supporting the:

Figure 2: (b) The consecutive CV scans taken using a TiN microelectrode array in a solution containing 2.5 mM of [NnBu4] GeCl6, 1 mM [NnBu4] SbCl4 and 2 mM [NnBu4]2TeCl6.
Figure 5: (a) I-V curves showing 15 voltage sweeps demonstrating phase switching of a micro device in a 10×1 array from its high resistance state (amorphous phase) to its low resistance state (crystalline phase). After every SET operation, the device was RESET using a 5V, 100 ns pulse with a 10 ns rise and fall time. (b) A graph showing the on/off resistance ratio for another device with a demonstrable endurance of around 80 cycles. Resistance distribution of the RESET (c) and SET (d) states. (e) A demonstration of the transition of a device to its low resistance state as the SET pulse width is changed showing that a pulse width greater than 50 µs is needed to induce a reduction in the device’s resistance state.