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Leakage compensation scheme for ultra-high-resistance pseudo-resistors in neural amplifiers

Leakage compensation scheme for ultra-high-resistance pseudo-resistors in neural amplifiers
Leakage compensation scheme for ultra-high-resistance pseudo-resistors in neural amplifiers

Although MOS-based pseudo-resistors are capable of achieving the ultra-high resistance required to design small-area neural amplifiers, they suffer from substrate leakage currents which become dramatically higher when the devices are exposed to light. This can cause unwanted amplifier offsets and hinders the usability of these devices in the emerging optoelectrical neural applications. A solution is proposed to compensate the pseudo-resistor leakage current using a dummy deep N-well device. Experimental results show that neural amplifiers implemented with the compensated pseudo-resistor become more robust to photo-induced leakage currents.

0013-5194
270-272
Wang, S.
97433cb6-7752-4c68-89f8-933f233d8642
Lopez, C. M.
b7db9e25-fd8b-4d0e-8e91-2e201640a1eb
Ballini, M.
5ce563dd-6818-4688-b799-1df93ccf5df1
Van Helleputte, N.
bad8e4b6-6d24-440f-97c3-e1ddeda371f1
Wang, S.
97433cb6-7752-4c68-89f8-933f233d8642
Lopez, C. M.
b7db9e25-fd8b-4d0e-8e91-2e201640a1eb
Ballini, M.
5ce563dd-6818-4688-b799-1df93ccf5df1
Van Helleputte, N.
bad8e4b6-6d24-440f-97c3-e1ddeda371f1

Wang, S., Lopez, C. M., Ballini, M. and Van Helleputte, N. (2018) Leakage compensation scheme for ultra-high-resistance pseudo-resistors in neural amplifiers. Electronics Letters, 54 (5), 270-272. (doi:10.1049/el.2017.4032).

Record type: Letter

Abstract

Although MOS-based pseudo-resistors are capable of achieving the ultra-high resistance required to design small-area neural amplifiers, they suffer from substrate leakage currents which become dramatically higher when the devices are exposed to light. This can cause unwanted amplifier offsets and hinders the usability of these devices in the emerging optoelectrical neural applications. A solution is proposed to compensate the pseudo-resistor leakage current using a dummy deep N-well device. Experimental results show that neural amplifiers implemented with the compensated pseudo-resistor become more robust to photo-induced leakage currents.

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More information

Published date: 8 March 2018

Identifiers

Local EPrints ID: 450934
URI: http://eprints.soton.ac.uk/id/eprint/450934
ISSN: 0013-5194
PURE UUID: 87a95b99-8b30-45b5-9d4b-6c91888ab7bb
ORCID for S. Wang: ORCID iD orcid.org/0000-0002-5450-2108

Catalogue record

Date deposited: 24 Aug 2021 17:01
Last modified: 26 Nov 2021 03:23

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Contributors

Author: S. Wang ORCID iD
Author: C. M. Lopez
Author: M. Ballini
Author: N. Van Helleputte

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