CMOS UHF RFID Rectifier Design and Matching: an Analysis of Process and Temperature Variations
CMOS UHF RFID Rectifier Design and Matching: an Analysis of Process and Temperature Variations
Radio Frequency (RF) power transfer is an enabling technology of RFID systems. CMOS RF rectifiers enable miniaturization and improved integration with full systems. For certain applications, rectifiers may need to be deployed in high or low temperature environments, which can affect their power conversion efficiency (PCE). This work presents the design of a high efficiency 915 MHz CMOS Dickson charge-pump in a 28 nm FD-SOI process, and investigates antenna-based impedance matching as a method of maximizing the PCE for different temperatures and CMOS process variations. With a co-designed antenna, the proposed rectifier achieves 5.4x higher PCE compared to simple inductive-matching at -20 dBm. The PCE is then analyzed for CMOS process and temperature variations. It is shown that the rectifier can maintain 94% of its peak PCE at -15 dBm at -10°C through input-impedance matching. The proposed rectifier and matching technique achieves the highest PCE compared to state-of-the-art Dickson multipliers, while having the smallest die area.
RFID, CMOS, 28 nm, FD-SOI, Rectifier, RFIC, rectenna, impedance matching, process variations, temperature variations, wireless power transfer, rf energy harvesting
Wagih, Mahmoud
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Savanth, Anand
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Gamage, Sahan
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Weddell, Alex S.
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Beeby, Steve
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Wagih, Mahmoud
7e7b16ba-0c64-4f95-bd3c-99064055f693
Savanth, Anand
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Gamage, Sahan
855d3cab-0725-42e3-aaad-d5fdefa846e1
Weddell, Alex S.
3d8c4d63-19b1-4072-a779-84d487fd6f03
Beeby, Steve
ba565001-2812-4300-89f1-fe5a437ecb0d
Wagih, Mahmoud, Savanth, Anand, Gamage, Sahan, Weddell, Alex S. and Beeby, Steve
(2021)
CMOS UHF RFID Rectifier Design and Matching: an Analysis of Process and Temperature Variations.
In 2021 IEEE International Conference on RFID Technology and Applications (RFID-TA).
IEEE..
(In Press)
Record type:
Conference or Workshop Item
(Paper)
Abstract
Radio Frequency (RF) power transfer is an enabling technology of RFID systems. CMOS RF rectifiers enable miniaturization and improved integration with full systems. For certain applications, rectifiers may need to be deployed in high or low temperature environments, which can affect their power conversion efficiency (PCE). This work presents the design of a high efficiency 915 MHz CMOS Dickson charge-pump in a 28 nm FD-SOI process, and investigates antenna-based impedance matching as a method of maximizing the PCE for different temperatures and CMOS process variations. With a co-designed antenna, the proposed rectifier achieves 5.4x higher PCE compared to simple inductive-matching at -20 dBm. The PCE is then analyzed for CMOS process and temperature variations. It is shown that the rectifier can maintain 94% of its peak PCE at -15 dBm at -10°C through input-impedance matching. The proposed rectifier and matching technique achieves the highest PCE compared to state-of-the-art Dickson multipliers, while having the smallest die area.
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More information
Accepted/In Press date: 28 August 2021
Venue - Dates:
2021 IEEE International Conference on RFID Technology and Applications, , Delhi, India, 2021-10-06 - 2021-10-08
Keywords:
RFID, CMOS, 28 nm, FD-SOI, Rectifier, RFIC, rectenna, impedance matching, process variations, temperature variations, wireless power transfer, rf energy harvesting
Identifiers
Local EPrints ID: 451176
URI: http://eprints.soton.ac.uk/id/eprint/451176
PURE UUID: 8ba60e64-a899-4002-b995-6ee64c33fded
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Date deposited: 14 Sep 2021 16:02
Last modified: 19 Dec 2023 03:08
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Contributors
Author:
Mahmoud Wagih
Author:
Anand Savanth
Author:
Sahan Gamage
Author:
Alex S. Weddell
Author:
Steve Beeby
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