Compact modeling of the switching dynamics and temperature dependencies in TiOx memristors: Part I — behavioural model

Abstract

Memristor is a promising device as a fundamental building block for future unconventional system architectures such as neuromorphic computing, reconfigurable logic, and multibit memories. Therefore, to facilitate circuit design using memristors, accurate and efficient models spanning a wide range of programming voltages and temperatures are required. In the first part of this series, we propose a behavioral model for temperature dependence of nonvolatile switching dynamics of TiOx memristors. We begin by describing pulsed resistance transients (PRTs) of the memristors and then we use a multistage methodology to establish bias and temperature dependence of the model parameters. The proposed model is then shown to accurately describe the PRT characteristics of Pt/TiOx/Au and Pt/TiOx/Pt memristors.

More information

Identifiers

Catalogue record

Export record

ASCII CitationAtomBibTeXData Cite XMLDublin CoreDublin CoreEP3 XMLEndNoteHTML CitationHTML CitationHTML ListJSONMETSMODSMPEG-21 DIDLOpenURL ContextObjectOpenURL ContextObject in SpanRDF+N-TriplesRDF+N3RDF+XMLRIOXX2 XMLReferReference ManagerSimple Metadata

Altmetrics