The University of Southampton
University of Southampton Institutional Repository
Warning ePrints Soton is experiencing an issue with some file downloads not being available. We are working hard to fix this. Please bear with us.

On low-leakage CMOS switches

On low-leakage CMOS switches
On low-leakage CMOS switches
Continuing CMOS process scaling to favor the design of high-performance digital systems has resulted in many issues for precision analog design, and one of which is the detrimental transistor leakage. This paper focuses on the analysis and design of low-leakage switches. Specifically, transistor leakage mechanisms and the evolution of low-leakage switch design techniques are revisited. Different schemes to achieve transistor channel and body leakage reduction are discussed. In addition,we propose a low-leakage switch that can operate for a wide temperature range. At 200 ◦C, it achieves 130× and 8× lower leakage than the transmission gate and the popular analog Tswitch, respectively.
Wang, Bo
9fdfe30a-5648-4ba2-9f0c-123cba339c5d
Wang, Shiwei
97433cb6-7752-4c68-89f8-933f233d8642
Law, Man-Kay
bddb64ce-9dee-45ca-a4fe-038d9994c725
Wang, Bo
9fdfe30a-5648-4ba2-9f0c-123cba339c5d
Wang, Shiwei
97433cb6-7752-4c68-89f8-933f233d8642
Law, Man-Kay
bddb64ce-9dee-45ca-a4fe-038d9994c725

Wang, Bo, Wang, Shiwei and Law, Man-Kay (2021) On low-leakage CMOS switches. 2021 IEEE 64th International Midwest Symposium on Circuits and Systems. 09 - 11 Aug 2021. 5 pp .

Record type: Conference or Workshop Item (Paper)

Abstract

Continuing CMOS process scaling to favor the design of high-performance digital systems has resulted in many issues for precision analog design, and one of which is the detrimental transistor leakage. This paper focuses on the analysis and design of low-leakage switches. Specifically, transistor leakage mechanisms and the evolution of low-leakage switch design techniques are revisited. Different schemes to achieve transistor channel and body leakage reduction are discussed. In addition,we propose a low-leakage switch that can operate for a wide temperature range. At 200 ◦C, it achieves 130× and 8× lower leakage than the transmission gate and the popular analog Tswitch, respectively.

Text
2021097438 - Accepted Manuscript
Download (608kB)

More information

Accepted/In Press date: 30 June 2021
Published date: 13 September 2021
Venue - Dates: 2021 IEEE 64th International Midwest Symposium on Circuits and Systems, 2021-08-09 - 2021-08-11

Identifiers

Local EPrints ID: 451447
URI: http://eprints.soton.ac.uk/id/eprint/451447
PURE UUID: 5ffd5e92-30cb-45c3-b28a-d8187144e2cb
ORCID for Shiwei Wang: ORCID iD orcid.org/0000-0002-5450-2108

Catalogue record

Date deposited: 28 Sep 2021 16:34
Last modified: 29 Sep 2021 02:03

Export record

Contributors

Author: Bo Wang
Author: Shiwei Wang ORCID iD
Author: Man-Kay Law

Download statistics

Downloads from ePrints over the past year. Other digital versions may also be available to download e.g. from the publisher's website.

View more statistics

Atom RSS 1.0 RSS 2.0

Contact ePrints Soton: eprints@soton.ac.uk

ePrints Soton supports OAI 2.0 with a base URL of http://eprints.soton.ac.uk/cgi/oai2

This repository has been built using EPrints software, developed at the University of Southampton, but available to everyone to use.

We use cookies to ensure that we give you the best experience on our website. If you continue without changing your settings, we will assume that you are happy to receive cookies on the University of Southampton website.

×